| 复合介质L型侧墙形成技术 |
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| 引用本文： | 金海岩,高玉芝,冯国进,莫邦燹,张利春.复合介质L型侧墙形成技术[J].固体电子学研究与进展,2001,21(1):69-74. |
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| 作者姓名： | 金海岩 高玉芝 冯国进 莫邦燹 张利春 |
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| 作者单位： | 北京大学微电子研究所，100871 |
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| 摘 要： | :给出了 E- B之间复合介质 L型侧墙的形成技术。这种工艺技术控制容易 ,成品率高 ,均匀性好。已将这种工艺技术应用于双层多晶硅双极晶体管的制作工艺中 ,器件具有良好的电学特性。
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| 关 键 词： | 双极工艺 多晶硅发射极 自对准 侧墙 |
| 文章编号： | 1000-3819(2001)01-0069-06 |
| 修稿时间： | 1999年7月23日 |
Technology to Form Multiple-dielectric-layer L-shaped Sidewall |
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| JIN Haiyan.Technology to Form Multiple-dielectric-layer L-shaped Sidewall[J].Research & Progress of Solid State Electronics,2001,21(1):69-74. |
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| Authors: | JIN Haiyan |
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| Abstract: | This paper introduces the technology to form multiple dielectric layer L shaped sidewall between emitter and base. It has been proven that this technology can be easily controlled and high rate of products and good uniformity have been achieved. This technology has been applied to the double layer polysilicon bipolar transistor process and excellent transistor performance has been obtained. |
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| Keywords: | bipolar technology poly Si emitter self aligned sidewall |
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