| 电子镇流器控制器中带隙基准源的设计与实现 |
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| 引用本文： | 余有灵,许维胜,吴启迪.电子镇流器控制器中带隙基准源的设计与实现[J].半导体技术,2004,29(11):61-64. |
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| 作者姓名： | 余有灵 许维胜 吴启迪 |
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| 作者单位： | 同济大学半导体与信息技术研究所,上海,200092;同济大学半导体与信息技术研究所,上海,200092;同济大学半导体与信息技术研究所,上海,200092 |
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| 摘 要： | 根据电子镇流器控制器对基准电源的设计要求,利用不同电流密度下两晶体管基极-发射极电压差的正温度特性,通过镜像电流源方式产生PTAT(proportional to absolute temperature)电流,再结合基极-发射极电压本身的负温度特性产生的电流,形成带隙基准电流源.仿真结果表明,该基准源的性能指标能满足系统设计的要求.
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| 关 键 词： | 带隙基准源 灵敏度 电源抑制比 |
| 文章编号： | 1003-353X(2004)11-0061-04 |
| 修稿时间： | 2003年7月26日 |
Design of Band-gap Voltage Reference Source of the Ballast controller |
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| YU You-ling,XU Wei-sheng,Wu Qi-di.Design of Band-gap Voltage Reference Source of the Ballast controller[J].Semiconductor Technology,2004,29(11):61-64. |
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| Authors: | YU You-ling XU Wei-sheng Wu Qi-di |
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| Abstract: | From the requirements of ballast and the positive temperature characteristics of thevoltage difference of the base-emitter of two transistors, the PTAT current is produced by mirrorcurrent source and this is combined with the current produced by the negative temperature of thevoltage of the base-emitter of transistor, then the bandgap current reference source is derived. Thesimulation results show its voltage and temperature performances can meet the design requirements. |
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| Keywords: | bandgap reference source (BGR) sensitivity PSRR |
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