Sub-1 V,pico-watt subthreshold CMOS voltage reference circuit with dual temperature compensation |
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| Affiliation: | 1. Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab., Luleå University of Technology, Sweden;2. Department of Micro and Nano Sciences, School of Electrical Engineering, Aalto University, Espoo, Finland;1. School of Physics & Electronic Engineering, Guangzhou University, Guangzhou, China;2. Institute of Election & Communication, Sun Yat-sen University, Guangzhou, China;1. Microelectronics School, Xidian University, Xi’an 710071, PR China;2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, PR China |
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| Abstract: | A pico-watt CMOS voltage reference is developed using an SK Hynix 0.18 µm CMOS process. The proposed architecture is resistorless and consists of MOSFET circuits operated in the subthreshold region. A dual temperature compensation technique is utilized to produce a near-zero temperature coefficient reference output voltage. Experimental results demonstrate an average reference voltage of 250.7 mV, with a temperature coefficient as low as 3.2 ppm/°C for 0 to 125 °C range, while the power consumption is 545 pW under a 420 mV power supply at 27 °C. The power supply rejection ratio and output noise without any filtering capacitor at 100 Hz are −54.5 dB and 2.88 µV/Hz1/2, respectively. The active area of the fabricated chip is 0.00332 mm2. |
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| Keywords: | Pico-watt Subthreshold Temperature coefficient PTAT PSRR |
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