| 水热—溶胶凝胶法制备PZT薄膜 |
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| 引用本文： | 董娜娜,朱孔军,裘进浩,孟庆华,季宏丽.水热—溶胶凝胶法制备PZT薄膜[J].电子元件与材料,2011,30(12):17-20,26. |
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| 作者姓名： | 董娜娜 朱孔军 裘进浩 孟庆华 季宏丽 |
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| 作者单位： | 南京航空航天大学机械结构强度与振动国家重点实验室,江苏南京,210016 |
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| 基金项目： | 航空科学基金资助项目，长江学者创新团队项目资助，教育部新世纪优秀人才支持计划资助项目 |
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| 摘 要： | 采用水热—溶胶凝肢法制备了锆钛酸铅( PZT)压电陶瓷薄膜.首先利用水热法处理Si基板,使之生成SiO2/Si层,然后采用旋涂法在处理好的Si基板上涂覆摩尔比r(Zr:Ti)为52:48的PZT前驱体溶胶.研究了基板处理方式、退火温度以及涂胶层数对PZT薄膜结晶性能、表面形貌及厚度的影响.结果表明:水热处理Si基板对P...
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| 关 键 词： | 压电 锆钛酸铅 薄膜 水热—溶胶凝胶 |
Preparation of PZT thin films by hydrothermal-sol-gel method |
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| DONG Na'na,ZHU Kongjun,QIU Jinhao,MENG Qinghua,Jl Hongli.Preparation of PZT thin films by hydrothermal-sol-gel method[J].Electronic Components & Materials,2011,30(12):17-20,26. |
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| Authors: | DONG Na'na ZHU Kongjun QIU Jinhao MENG Qinghua Jl Hongli |
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| Affiliation: | (State Key Laboratory of Mechanics and Control of Mechanical Structures,Nanjing University of Aeronautics & Astronautics,Nanjing 210016,China) |
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| Abstract: | PZT thin films were prepared by a hydrothermal-sol-gel method.The Si substrates were hydrothermally treated to be changed into SiO2/Si substrates,then the wet films were prepared by spin-coating technique using PZT precursor sol with a Zr/Ti mole ratio of 52/48.The effects of substrate treatment methods,annealing temperatures and layer numbers on the crystallinity,surface morphology and thickness of the PZT thin films were studied.The results show that the hydrothermal treatment of substrate improves properties of the film considerably;the PZT thin films crystallize better and become more compact with the increase of annealing temperature;the Si substrates hydrothermally treated at 200 ℃ for 16 h and the PZT films annealed at 850 ℃ show the best crystallization property and surface morphology. |
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| Keywords: | piezoelectric PZT thin films hydrothermal-sol-gel |
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