| 硅表面内铵盐型碳菁膜及光电特性 |
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| 引用本文： | 王兰英,辜继先,张晓红,张祖训,曹子祥.硅表面内铵盐型碳菁膜及光电特性[J].半导体光电,1999,20(2). |
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| 作者姓名： | 王兰英 辜继先 张晓红 张祖训 曹子祥 |
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| 作者单位： | 西北大学,西安,710069 |
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| 摘 要： | 通过硅氧碳键（ Ｓｉ－ Ｏ－ Ｃ） 将两个内铵盐型碳菁染料在硅表面化学成膜，利用表面增强喇曼光谱（ Ｓ Ｅ Ｒ Ｓ） 和 Ｘ 射线光电子能谱（ Ｘ Ｐ Ｓ） 确证其结构，并测定了键合染料膜硅片的光谱响应和表面光电压。结果表明染料可使硅敏化，且成膜硅片具有光生伏特效应
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| 关 键 词： | 硅 光敏染料 化学成膜 光电特性 |
Inner ammonium salt carbocyanine film on silicon surface and its photoelectric properties |
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| WANG Lanying,GU Jixian,ZHANG Xiaohong,ZHANG Zuxun,CAO Zixiang.Inner ammonium salt carbocyanine film on silicon surface and its photoelectric properties[J].Semiconductor Optoelectronics,1999,20(2). |
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| Authors: | WANG Lanying GU Jixian ZHANG Xiaohong ZHANG Zuxun CAO Zixiang |
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| Abstract: | Two inner salt carbocyanine dyes are chemically filmed on the Si surface through Si-O-C bond.The structures are characterized by SERS and XPS.And the spectral response and surface photovoltage spectrum are measured.These results show that the Si wafer can be sensitized by dyes,and the filmed Si wafers exhibit photovoltage effect. |
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| Keywords: | Silicon Photosensitive Dye Chemically Filming Photoelectric Properties |
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