Enhanced dielectric and piezoelectric properties in potassium sodium niobate/polyvinylidene fluoride composites using nano-silicon carbide as an additive

Piezoelectric materials are an indispensable part of modern life. Yet the existing environmental issues with conventional lead-based piezoelectrics has motivated scientist to develop novel substitutes including lead-free piezoelectric polymer composites. Following this path, the present research has focused on the fabrication of ternary composites of Polyvinylidene fluoride (PVDF)/Potassium Sodium Niobate (KNN)/nano-Silicon carbide (SiC) via hot compression molding and studying the effect of additives on the PVDF structure and the electrical properties of the composite. The obtained scanning electron micrographs and density measurements showed that the fabrication method provided dense samples. The activated polarization phenomena in the prepared samples enhanced dielectric permittivity and dielectric loss at a constant frequency with increasing KNN and SiC contents. Besides the expected dipole polarization, the presence of interfaces in the composites gave rise to the Maxwell–Wagner–Sillars effect and its corresponding polarization phenomenon. The semiconductive nature of SiC also promoted space charge polarization. However, these properties were frequency-dependent because the first two polarization mechanisms are deactivated at high frequencies. XRD patterns showed that SiC addition can alter the primary crystalline structure of PVDF and promote β-phase formation in the poled samples. Piezoelectric measurements confirmed the significant role of SiC addition to PVDF-KNN composites. The most significant increase in the piezoelectric properties was observed in PVDF-60KNN-1SiC, with a 183% increase in d₃₃ value. The PVDF-80KNN-1SiC had the highest d₃₃ value of 30.5 pC/N. It also had the best piezoelectric voltage coefficient and hence the highest figure of merit. Higher SiC contents restrict the efficiency of poling by forming a conductive path across the sample which would deteriorate the piezoelectric performance of the material. The present findings show that PVDF-KNN-SiC composites can be considered as a potential flexible piezoelectric material for future applications.     

Mechanical and dielectric properties of functionalized boron nitride nanosheets/silicon nitride composites

Uniformly dispersed boron nitride nanosheets (BNNSs) reinforced silicon nitride (Si₃N₄) composites were prepared by surface modification assisted flocculation combined with SPS sintering. In order to improve the dispersibility of the BNNSs in the composites, the liquid phase stripped BNNSs are surface functionalized by a two-step covalently modification. The amino-modified BNNSs (NH₂-BNNSs) and Si₃N₄ powders have opposite surface potential, mixed evenly by electrostatic interaction during flocculation. The results showed that mechanical properties of Si₃N₄ composites were obviously enhanced by adding NH₂-BNNSs. The fracture toughness and bending strength of Si₃N₄ composites added 0.75 wt% NH₂-BNNSs were increased by 34% and 28%, respectively, compared with monolithic Si₃N₄. Toughening mechanisms are synergistic action of the torn, pull-out or bridging of BNNSs and crack deflection mechanisms with microstructural analyzes. The dielectric properties of the Si₃N₄ ceramics are also improved after the addition of NH₂-BNNSs.     

Zirconium-diboride silicon-carbide composites: A review

Zirconium diboride (ZrB₂) and silicon carbide (SiC) composites have long been of interest since it was observed that ZrB₂ improved the thermal shock resistance of SiC. However, processing of these materials can be difficult due to high and different sintering temperatures and differences in the thermodynamic stability of each material. ZrB₂–SiC composites have been processed in a variety of ways including hot-pressing, spark-plasma sintering, reactive melt infiltration, pack cementation, chemical vapor deposition, chemical vapor infiltration, stereolithography, direct ink writing, selective laser sintering, electron beam melting, and binder jet additive manufacturing. Each manufacturing method has its own pros and cons. This review serves to summarize more than 60 years of research and provide a coherent resource for the variety of methods and advancements in development of ZrB₂–SiC composites.     

Highly efficient chemical mechanical polishing method for SiC substrates using enhanced slurry containing bubbles of ozone gas

In this study, a highly efficient method for chemical mechanical polishing (CMP) of silicon carbide (SiC) substrates using enhanced slurry was proposed and developed. The enhanced slurry contains bubbles of ozone gas generated by ozone gas generator in pure water mixed with a conventional commercially available slurry. Therefore, the enhanced slurry has an oxidizing effect on the Si-face of SiC substrates. To confirm the effectiveness of bubbles enclosing ozone gas, both nano-indentation test and X-ray photoelectron spectroscopy (XPS) analysis were conducted. As a result, the hardness decrease of the Si-face of the SiC substrate was confirmed through the nano-indentation test, and the generation of reaction products was confirmed on Si-face of SiC substrate in the XPS analysis. According to a series of experimental results of our proposed highly efficient CMP method for SiC substrates, the removal rate can be increased when the enhanced slurry was applied, comparing with that for the not only conventional commercially available slurry but also commercially available dedicated slurry.     

CuInS2/SiNWs/Si composite material for application as potential photoelectrode for photoelectrochemical hydrogen generation

This work aims at developing a new composite material based on nanosized semiconducting CuInS₂ (CIS) particles combined with silicon nanowires grown on a silicon substrate (SiNWs/Si) for photoelectrochemical (PEC)-splitting of water. The CIS particles were prepared via a colloidal method using N-methylimidazole (NMI) as the solvent and an annealing treatment. The SiNWs were obtained by chemical etching of silicon (100) substrates assisted by a metal. The CIS/SiNWs/Si composite material was obtained by deposition of an aliquot of a suspension of CIS particles onto the SiNWs/Si substrate, using spin coating followed by a drying step. The XRD pattern demonstrated that CuInS₂ grows in the tetragonal/chalcopyrite phase, while SiNWs/Si presents a cubic structure. The SEM images show semi-spherical particles (～10 nm) distributed on the surface of silicon nanowires (～10 μm). The EIS measurements reveal n-type conductivity for CIS, SiNWs/Si and CIS/SiNWs/Si materials, which could favour the oxidation reaction of water molecules.     

An easy and scalable approach to synthesize three-dimensional sandwich-like Si/Polyaniline/Graphene nanoarchitecture anode for lithium ion batteries

A new three-dimensional (3D) sandwich-like Si/Polyaniline/Graphene nanoarchitecture anode for lithium ion batteries (LIBs) is successfully fabricated through an easy approach. In this nanoarchitecture, the in-situ polymerized electronic conductive polyaniline (PAni) hydrogel, acting as “glue”, agglutinates tightly to both the silicon nanoparticles (SiNPs) and graphene sheets, forming efficient conductive networks with high elastic modulus and high tensile strength. This mechanically robust nanoarchitecture can endure the great volume change of silicon and retain structural stability during Li-ion insertion/extraction. The electrodes consisting of this 3D sandwich-like Si/Polyaniline/Graphene nanoarchitecture reveal excellent electrochemical performance. The progress made in this work provides an easy and scalable route for preparing Si-based anode materials with high performance for advanced LIBs.     

Wire electrical discharge machinable SiC with GNPs and GO as the electrically conducting filler

SiC based composites filled with graphene nano-platelets (GNPs) or graphene oxide (GO) prepared by rapid hot-pressing exhibit sufficient electrical conductivity for their machinability by wire electro-discharge machining (WEDM). Composites microstructure anisotropy caused by graphene alignment as a consequence of rapid hot pressing was confirmed by measuring of electrical conductivity and thermal diffusivity. Electrical conductivity increased significantly with increased weight fraction of graphene in both measured directions. Highest value of 2031 S/m was obtained for composites with 15 wt. % of GNPs in parallel direction and only 1246 S/m in perpendicular direction to aligned GNPs. Thermal diffusivity is 63.3 mm²/s in parallel and only 23.3 mm²/s in perpendicular direction. The increase of the electrical conductivity has resulted in successful WEDM. The MRR was almost doubled when the filler concentration increased from 5 wt. % GNPs/GO to 15 wt. % GNPs. At the same time, the surface roughness decreased.     

Effect of MgF2 addition on mechanical properties and thermal conductivity of silicon nitride ceramics

Dense silicon nitride (Si₃N₄) ceramics were prepared using Y₂O₃ and MgF₂ as sintering aids by spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering annealing at 1900 °C for 4 h. Effects of MgF₂ contents on densification, phase transformation, microstructure, mechanical properties, and thermal conductivity of the Si₃N₄ ceramics before and after heat treatment were investigated. Results indicated that the initial temperature of liquid phase was effectively decreased, whereas phase transformation was improved as increasing the content of MgF₂. For optimized mechanical properties and thermal conductivity of Si₃N₄, optimum value for MgF₂ content existed. Sample with 3 mol.% Y₂O₃ and 2 mol.% MgF₂ obtained optimum flexural strength, fracture toughness and thermal conductivity (857 MPa, 7.4 MPa m^1/2 and 76 W m⁻¹ K⁻¹, respectively). It was observed that excessive MgF₂ reduced the performance of the ceramic, which was caused by the presence of excessive volatiles.     

Fabrication of fine-grained α/β Si3N4 by Hot Pressing Flowing Sintering at 1550 °C

In this paper, Hot Pressing Flowing Sintering (HPFS) was successfully applied to the consolidation of silicon nitride ceramics at low sintering temperature. Fine-grained α/β-Si₃N₄ with high density was fabricated by HPFS at 1550 °C. The low temperature densification process was based on the hot pressing flow enhanced particle rearrangement mechanism. The shear stress which generated in the flowing process helped enhance the particle rearrangement with the lubrication of the liquid phase, which lead to collapse of the pores. The densification process was finished with minimum grain growth. Meanwhile, the rod-like β-Si₃N₄ nuclei was textured during the flowing process. The (101)/(210) ratio of β-Si₃N₄ was 0.09 on the plane perpendicular to the hot-pressing direction. The Vickers hardness and flexural strength of the sintered sample was 19.59 ± 0.36 GPa and 1022 ± 138 MPa, respectively.     

Storage and permeation of hydrogen molecule,atom and ions (H+ and H−) through silicon carbide nanotube; a DFT approach

The barriers for the encapsulation and decapsulation of hydrogen ions (cationic hydrogen and hydride), atom, and molecule through silicon carbide nanotube are thoroughly studied. DFT method is selected to measure the kinetic barriers for the passage of hydrogen atom, ions and molecule through nanotube via scanning potential energy surface. The kinetic barriers for the passage (encapsulation and decapsulation) of hydrogen are very important to understand the mechanism of hydrogen storage and release. The barriers for the permeation of H, H⁺ and H^? across SiC nanosheet are lower compared to hydrogen molecule (H₂). The exohedral and endohedral adsorption of hydrogen ions (cation and anion), atom and exohedral hydrogen molecule on silicon carbide are exothermic in nature. Whereas the encapsulation of hydrogen molecule in silicon carbide is endothermic. Electronic properties are analyzed through measurement of energy gap between highest occupied and lowest unoccupied molecular orbitals gap (G_H-L) and the density of state (DOS) spectra. The G_H-L analysis reveals that endohedral complexes have more pronounced effect on electronic properties compared to exohedral complexes. The SiC nanotube has highly favorable properties for storage and release of hydrogen ions, and atom.