| 全耗尽SOI LDMOS击穿电压的分析 |
| |
| 引用本文： | 吴秀龙,孟坚,陈军宁,柯导明.全耗尽SOI LDMOS击穿电压的分析[J].微电子学,2006,36(2):159-161. |
| |
| 作者姓名： | 吴秀龙 孟坚 陈军宁 柯导明 |
| |
| 作者单位： | 安徽大学,电子科学与技术学院,安徽,合肥,230039 |
| |
| 基金项目： | 中国科学院资助项目;国家科技攻关项目 |
| |
| 摘 要： | SOI技术已经成功地应用到功率集成电路中,击穿电压是功率器件一个重要的参数。文章分析了SOI LDMOS的击穿电压与漂移区掺杂浓度的关系,并计算了击穿电压。文中首先定义出漂移区临界掺杂浓度,然后分别给出了实际掺杂浓度高于和低于临界掺杂浓度的击穿电压计算公式。计算结果与文献中给出的数值相吻合,证明了模型的正确性。
|
| 关 键 词： | SOI LDMOS 击穿电压 |
| 文章编号： | 1004-3365（2006）02-0159-03 |
| 收稿时间： | 2005-09-28 |
| 修稿时间： | 2005-09-282005-12-05 |
Analysis of Breakdown Voltage of Fully Depleted SOI LDMOS |
| |
| WU Xiu-long,MENG Jian,CHEN Jun-ning,KE Dao-ming.Analysis of Breakdown Voltage of Fully Depleted SOI LDMOS[J].Microelectronics,2006,36(2):159-161. |
| |
| Authors: | WU Xiu-long MENG Jian CHEN Jun-ning KE Dao-ming |
| |
| Affiliation: | School of Electronic Science and Technology, Anhui University, He fei, Anhui 230039, P. R. China |
| |
| Abstract: | Silicon on insulator(SOI) technology has been successfully used in power integrated circuits.Breakdown voltage is a very important parameter of power devices.The relationship between breakdown voltage and doping concentration of SOI LDMOS's drift region is analyzed in the paper.Critical doping concentration in the drift region is calculated,and formula to calculate the breakdown voltages for effective concentration higher or lower than critical doping concentration are given.Results are shown to be in good agreement with values in reference literatures,which demonstrates the effectiveness of the model. |
| |
| Keywords: | SOI LDMOS Breakdown voltage |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
