| 硅片直接键合过程中的界面控制 |
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| 引用本文： | 张正番.硅片直接键合过程中的界面控制[J].微电子学,1993,23(1):11-14. |
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| 作者姓名： | 张正番 |
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| 作者单位： | 机电部第24研究所 四川重庆，630060 |
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| 摘 要： | 本文研究了键合片Si/Si界面SiO_2层与材料、化学处理、键合条件及高温处理的关系,并研究了键合片中Si/SiO_2界面态与工艺的关系。
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| 关 键 词： | 单晶硅 Si／Si界面 SOI 键合工艺 |
Interface Control During Silicon Direct Bonding |
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| Zhang Zhengfan
Sichuan Institute of Solid-State Circuits.,CHongqing,Sichuan.Interface Control During Silicon Direct Bonding[J].Microelectronics,1993,23(1):11-14. |
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| Authors: | Zhang Zhengfan
Sichuan Institute of Solid-State Circuits CHongqing Sichuan |
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| Affiliation: | Zhang Zhengfan
Sichuan Institute of Solid-State Circuits.630060,CHongqing,Sichuan |
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| Abstract: | The dependence of the Si-Si interfacial layer on a bonded wafer upon the material, chemical treatment, bonding conditions and high temperature handling has been investigated. Also, the dependence of Si-SiO2 interface state in the bonded wafer upon process technology is described in the paper. |
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| Keywords: | Crystalline silicon Bonding Si-Si interface Interface state SOI SDB |
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