不同HALO掺杂剂量的超薄栅pMOSFET的退化

研究了热载流子应力下栅厚为2.1nm,栅长为0.135μm的pMOSFET中HALO掺杂剂量与器件的退化机制和参数退化的关系.实验发现,器件的退化机制对HALO掺杂剂量的改变不敏感,但是器件的线性漏电流、饱和漏电流、最大跨导的退化随着HALO掺杂剂量的增加而增加.实验同时发现,器件参数的退化不仅与载流子迁移率的退化、漏串联电阻增大有关,而且与阈值电压的退化和应力前阈值电压有关.

Degradation of pMOSFETs with Ultrathin Oxide and Different HALO Dose

The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm oxide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO dose changing,but the degradation quantities of linear drain current,saturation drain current,and maximum transconductance increase with HALO dose enhancing and are larger than those of speculated before.The degradation of device parameters (linear drain current,saturation drain current,and maximum transconductance) is attributed to not only the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.