| 一个电压接近1V 10ppm/℃带曲率补偿的CMOS带隙基准源 |
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| 引用本文： | 幸新鹏,李冬梅,王志华.一个电压接近1V 10ppm/℃带曲率补偿的CMOS带隙基准源[J].半导体学报,2008,29(1). |
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| 作者姓名： | 幸新鹏 李冬梅 王志华 |
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| 作者单位： | 1. 清华大学微电子研究所,北京,100084
2. 清华大学电子工程系,北京,100084 |
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| 基金项目： | 国家自然科学基金，北京市科委科研项目 |
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| 摘 要： | 介绍了一个带曲率补偿的低电压带隙基准源.由于采用电流模结构,带隙基准源的最低电源电压为900mV.通过VEB线性化补偿技术,带隙基准源在0到150℃的温度范围内的温度系数为10ppm/℃.在电源电压为1.1V时,电源电流为43μA,低频的PSRR为55dB.该带隙基准源已通过UMC 0.18μm混合信号工艺验证,芯片面积为0.186mm2.
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| 关 键 词： | CMOS带隙基准源 低电源电压 曲率补偿 |
A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation |
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| Xing Xinpeng,Li Dongmei,Wang Zhihua.A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation[J].Chinese Journal of Semiconductors,2008,29(1). |
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| Authors: | Xing Xinpeng Li Dongmei Wang Zhihua |
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| Abstract: | A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppm/℃ from 0 to 150℃. With a 1.1V supply voltage, the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0.186mm2 of chip area. |
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| Keywords: | CMOS bandgap reference low voltage curvature compensation |
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