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SOI波导弯曲损耗影响因素的分析
引用本文:陈媛媛,余金中,严清峰,陈少武.SOI波导弯曲损耗影响因素的分析[J].半导体学报,2005,26(13):216-219.
作者姓名:陈媛媛  余金中  严清峰  陈少武
作者单位:中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083
摘    要:采用有效折射率方法EIM(effective index method)和二维束传播算法(2D-BPM)对SOI (silicon-on-insulator)波导弯曲损耗的几种影响因素进行了分析. 通过模拟发现弯曲损耗随弯曲半径的增大、波导宽度的增加及内外脊高比的减小而减小. 同时,改进波导结构,例如在弯曲波导外侧刻槽可以减小SOI脊形波导的弯曲损耗.

关 键 词:SOI  弯曲波导  弯曲损耗  集成光学

Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides
Chen Yuanyuan,Yu Jinzhong,Yan Qingfeng and Chen Shaowu.Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J].Chinese Journal of Semiconductors,2005,26(13):216-219.
Authors:Chen Yuanyuan  Yu Jinzhong  Yan Qingfeng and Chen Shaowu
Affiliation:State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Abstract:The influencing factors of bend loss of silicon-on-insulator (SOI) bend waveguides are analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM).The modeling results indicate that the bend loss decreases with the increase of bend radii and waveguide width,as well as with the decrease of the etching ratio of the rib waveguide.Meanwhile,improvement of the rib waveguide structure,such as constructing the SOI waveguide with asymmetric rib structure,or etching groove in outside of bend waveguide,will contribute to lower the bend loss of SOI bend waveguides.
Keywords:silicon-on-insulator  bend waveguide  bend loss  integrated optics
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