异质栅非对称Halo SOI MOSFET

为了抑制异质栅SOI MOSFET的漏致势垒降低效应，在沟道源端一侧引入了高掺杂Halo结构．通过求解二维电势Poisson方程，为新结构器件建立了全耗尽条件下表面势和阈值电压解析模型，并对其性能改进情况进行了研究．结果表明，新结构器件比传统的异质栅SOI MOSFETs能更有效地抑制漏致势垒降低效应，并进一步提高载流子输运效率．新结构器件的漏致势垒降低效应随着Halo区掺杂浓度的增加而减弱，但随Halo区长度非单调变化．解析模型与数值模拟软件MEDICI所得结果高度吻合．

Dual Material Gate SOI MOSFET with a Single Halo

In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source.Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson's equation.Its characteristic improvement is investigated.It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs.Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length.The analytical models agree well with the two-dimensional device simulator MEDICI.