用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术

采用在阳极化反应时改变电流强度的办法 ,在高掺杂的 P型硅 (111)衬底上制备了具有不同多孔度的双层结构多孔硅层 .用超高真空电子束蒸发技术在多孔硅表面外延生长了一层高质量的单晶硅膜 .在室温下 ,该外延硅片同另一生长有热二氧化硅的硅片键合在一起 ,在随后的热处理过程中 ,键合对可在多孔硅处裂开 ,从而使外延的单晶硅膜转移到具有二氧化硅的衬底上以形成 SOI结构 .扫描电镜、剖面投射电镜、扩展电阻和霍尔测试表明 SOI样品具有较好的结构和电学性能

Transfer of Thin Epitaxial Silicon Films by Wafer Bonding and Splitting of Double Layered Porous Silicon for SOI Fabrication

A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.