| 1nm/s高速率微晶硅薄膜的制备及其在太阳能电池中的应用 |
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| 引用本文： | 张晓丹,张发荣,赵颖,陈飞,孙建,魏长春,耿新华,熊绍珍.1nm/s高速率微晶硅薄膜的制备及其在太阳能电池中的应用[J].半导体学报,2007,28(2):209-212. |
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| 作者姓名： | 张晓丹 张发荣 赵颖 陈飞 孙建 魏长春 耿新华 熊绍珍 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071;南开大学光电子薄膜器件与技术研究所，光电子薄膜器件与技术天津市重点实验室，天津 300071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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国家自然科学基金
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天津市自然科学基金
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中国-希腊政府间合作基金和新世纪优秀人才计划资助项目 |
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| 摘 要： | 采用甚高频等离子体增强化学气相沉积技术,在相对较高气压和较高功率条件下,制备了不同硅烷浓度的微晶硅材料.材料沉积速率随硅烷浓度的增加而增大,通过对材料的电学特性和结构特性的分析得知:获得了沉积速率超过1 nm/s高速率器件质量级微晶硅薄膜,并且也初步获得了效率达6.3%的高沉积速率微晶硅太阳电池.
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| 关 键 词： | 甚高频等离子体增强化学气相沉积 微晶硅薄膜太阳电池 高沉积速率 高速率 微晶硅太阳电池 膜的制备 太阳能电池 应用 Fabrication Solar Cells Application Microcrystalline Silicon Deposition 效率 微晶硅薄膜 器件质量 分析 结构特性 电学特性 沉积速率 硅材料 硅烷浓度 条件 |
| 文章编号： | 0253-4177(2007)02-0209-04 |
| 收稿时间： | 9/6/2006 3:52:16 PM |
| 修稿时间： | 10/9/2006 4:54:27 PM |
Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells |
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| Zhang Xiaodan,Zhang Farong,Zhao Ying,Chen Fei,Sun Jian,Wei Changchun,Geng Xinhua and Xiong Shaozhen.Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells[J].Chinese Journal of Semiconductors,2007,28(2):209-212. |
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| Authors: | Zhang Xiaodan Zhang Farong Zhao Ying Chen Fei Sun Jian Wei Changchun Geng Xinhua and Xiong Shaozhen |
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| Affiliation: | Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China;Key Laboratory of Photo-Electronics,Thin Film Devices,and Technology of Tianjin,Institute of Photo-Electronics,Thin Film Devices,and Technology,Nankai University,Tianjin 300071,China |
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| Abstract: | A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different silane concentrations using relatively high pressure and power.The deposition rate of the materials increases with the increase of the silane concentration.Through analysis of the structural and electrical properties of the materials,it can be concluded that with a high deposition rate (above 1nm/s),device-quality microcrystalline silicon is obtained.As a result,a microcrystalline silicon solar cell with 6.3% conversion efficiency is obtained. |
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| Keywords: | very high frequency plasma enhanced chemical vapor deposition microcrystalline silicon solar cells high deposition rate |
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