| 一种用于高压降压型转换器的高精度强驱动能力驱动电路 |
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| 引用本文： | 李亚军,来新泉,叶强,袁冰.一种用于高压降压型转换器的高精度强驱动能力驱动电路[J].半导体学报,2014,35(12):125009-8. |
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| 作者姓名： | 李亚军 来新泉 叶强 袁冰 |
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| 作者单位： | Institute of Electronic CAD Xidian University;Key Laboratory of High-Speed Circuit Design and EMC Ministry of Education Xidian University |
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| 基金项目： | 国家自然科学基金;中央高校基本科研业务费专项资金 |
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| 摘 要： | This paper presents a novel driving circuit for the high-side switch of high voltage buck regulators.A 40 V P-channel lateral double-diffused metal–oxide–semiconductor device whose drain–source and drain–gate can resist high voltage, but whose source–gate must be less than 5 V, is used as the high-side switch. The proposed driving circuit provides a stable and accurate 5 V driving voltage for protecting the high-side switch from breakdown and achieving low on-resistance and simple loop stability design. Furthermore, the driving circuit with excellent driving capability decreases the switching loss and dead time is also developed to reduce the shoot-through current loss. Therefore, power efficiency is greatly improved. An asynchronous buck regulator with the proposed technique has been successfully fabricated by a 0.35 m CDMOS technology. From the results, compared with the accuracy of16.38% of the driving voltage in conventional design, a high accuracy of 1.38% is achieved in this work. Moreover,power efficiency is up to 95% at 12 V input and 5 V output.
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| 关 键 词： | driving drain switch breakdown resist transistor shoot capacitor regulator asynchronous |
Driving circuit with high accuracy and large driving capability for high voltage buck regulators |
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| Li Yajun,Lai Xinquan,Ye Qiang and Yuan Bing.Driving circuit with high accuracy and large driving capability for high voltage buck regulators[J].Chinese Journal of Semiconductors,2014,35(12):125009-8. |
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| Authors: | Li Yajun Lai Xinquan Ye Qiang and Yuan Bing |
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| Affiliation: | Institute of Electronic CAD, Xidian University, Xi'an 710071, China;Institute of Electronic CAD, Xidian University, Xi'an 710071, China;Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi'an 710071, China;Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi'an 710071, China |
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| Abstract: | This paper presents a novel driving circuit for the high-side switch of high voltage buck regulators. A 40 V P-channel lateral double-diffused metal-oxide-semiconductor device whose drain-source and drain-gate can resist high voltage, but whose source-gate must be less than 5 V, is used as the high-side switch. The proposed driving circuit provides a stable and accurate 5 V driving voltage for protecting the high-side switch from breakdown and achieving low on-resistance and simple loop stability design. Furthermore, the driving circuit with excellent driving capability decreases the switching loss and dead time is also developed to reduce the shoot-through current loss. Therefore, power efficiency is greatly improved. An asynchronous buck regulator with the proposed technique has been successfully fabricated by a 0.35 CDMOS technology. From the results, compared with the accuracy of 16.38% of the driving voltage in conventional design, a high accuracy of 1.38% is achieved in this work. Moreover, power efficiency is up to 95% at 12 V input and 5 V output. |
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| Keywords: | high voltage buck regulator PLDMOS driving circuit dead time |
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