| 薄膜SOI／CMOS的SPICE电路模拟 |
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| 引用本文： | 王阳元,奚雪梅.薄膜SOI／CMOS的SPICE电路模拟[J].电子学报,1994,22(5):88-93. |
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| 作者姓名： | 王阳元 奚雪梅 |
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| 作者单位： | 北京大学微电子学研究所 |
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| 摘 要： | 鉴于ＳＰＩＣＥ是目前世界上广泛采用的通用电路模拟程序，具具有可扩展模型的灵活性，我们通过修改ＳＰＩＣＥ源程序把新器件模型－－ＳＯＩＭＯＳＦＥＴ模型移植入ＳＰＩＣＥ中，通过我们的模拟工作，证实了我们模型的正确性和电路实用性，分析了器件参数对ＳＯＩ／ＣＭＯＳ电路速率的影响，这些结论可以很好地指导电路设计和工艺实践。
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| 关 键 词： | 薄膜电路 SOI CMOS电路 SPICE电路 |
TFSOI/CMOS ICs Simulation Using SPICE |
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| Wang Yangyuan, Xi Xuemei, Gan Xuewen, Cheng Yuhua, LiYingxue.TFSOI/CMOS ICs Simulation Using SPICE[J].Acta Electronica Sinica,1994,22(5):88-93. |
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| Authors: | Wang Yangyuan Xi Xuemei Gan Xuewen Cheng Yuhua LiYingxue |
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| Abstract: | A charge-based model for dc and transient circuit simulation has been implemented in SPICE,thereby enabling proper simulation and CAD of SOI/CMOS integrated circuits to be realized. The utility and computing efficiency of the SOIMOSFET model implementation are demonstrated by simulating several representative SOI/CMOS circuits. It has been shown that the shorter channel-length and the thinner Si-film thickness,the faster SOI/CMOS circuit speed,which can compensate low speed caused by decreased power voltage. |
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| Keywords: | SPICE circuit simulation Thin-film SOI/CMOS circuits Implementation of device models |
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