The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si<sub>0.9</sub>Ge<sub>0.1</sub>:Si substrates期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si_0.9Ge_0.1:Si substrates

Authors:	LS Riley S Hall JM Bonar

Affiliation:	^a Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK;^b Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, UK

Abstract:	A simple technique leading to the measurement of minority carrier lifetimes of UHV compatible LPCVD Si and SiGe by C–t depth profiling of Metal:Oxide:Si:SiGe:Si structures is reported. A high quality gate oxide is realised by low temperature (<100°C) plasma anodisation thereby reducing any oxidation effects on the underlying epitaxial layer quality. Capacitance response times were observed for an impurity concentration of 2.5×10¹⁷ cm⁻³, giving rise to generation lifetimes of the Si and Si_0.9Ge_0.1 of >0.55 and 2.6 μs respectively, reflective of very high quality epitaxial semiconductor material.

Keywords:	Chemical vapour deposition Plasma anodisation Silicon Silicon germanium Generation lifetime
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