| 铪/二氧化铪基双极阻变存储器特性研究 |
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| 引用本文： | 毕津顺,韩郑生.铪/二氧化铪基双极阻变存储器特性研究[J].半导体学报,2015,36(6):064010-5. |
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| 作者姓名： | 毕津顺 韩郑生 |
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| 摘 要： | 本文制备了纳米级Hf/HfO2阻变存储器（RRAM）。RRAM顶层电极和底部电极交叉，从而形成了金属-氧化物-金属结构。系统地研究了RRAM的电学特性，包括forming过程，SET过程和RESET过程。讨论了SET电压和RESET电压的相关性，以及高阻态和低阻态的相关性。RRAM的电学特性与SET过程中的限制电路强相关。可以基于量子点接触模型，阐述纳米级Hf/HfO2阻变存储器的导通机制。
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| 关 键 词： | hafnium dioxide bipolar resistive random-access-memory conductive filament quantum point contact model |
| 收稿时间： | 2014/12/5 0:00:00 |
| 修稿时间： | 1/7/2015 12:00:00 AM |
Characteristics of HfO2/Hf-based bipolar resistive memories |
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| Bi Jinshun and Han Zhengsheng.Characteristics of HfO2/Hf-based bipolar resistive memories[J].Chinese Journal of Semiconductors,2015,36(6):064010-5. |
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| Authors: | Bi Jinshun and Han Zhengsheng |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Nano-scale Hf/HfO2-based resistive random-access-memory (RRAM) devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are discussed. The electrical characteristics of RRAM are in a strong relationship with the compliance current in the SET process. The conduction mechanism of nano-scale Hf/HfO2-based RRAM can be explained by the quantum point contact model. |
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| Keywords: | hafnium dioxide bipolar resistive random-access-memory conductive filament quantum point contact model |
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