SiGeBiCMOS线性器件脉冲激光单粒子瞬态效应研究

验证SiGe BiCMOS工艺线性器件的单粒子瞬态（Single Event Transient，SET）效应敏感性，选取典型运算放大器THS4304和稳压器TPS760进行了脉冲激光试验研究。试验中，通过能量逐渐逼近方法确定了其诱发SET效应的激光阈值能量，并通过逐点扫描的办法分析了器件内部单粒子效应敏感区域，并在此基础上分析了脉冲激光能量与SET脉冲的相互关系，获得了单粒子效应截面，为SiGe BiCMOS工艺器件在卫星电子系统的筛选应用以及抗辐射加固设计提供数据参考。

Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser

To verify the sensitivity of the single event transient effects of SiGe BiCMOS linear devices, a typical operational amplifier THS4304 and a voltage regulator TPS760 were selected to study the single event effects with pulsed laser. In the experiments, a method was proposed to determine the laser threshold energy of single event transient by gradual changing energy. And the sensitive region of single event effects within the device was analyzed by point-by-step scanning method. On this basis, the interaction between the pulse laser energy and the single event transient was analyzed, and the single event effects cross section was obtained, which provided a reference for the selection and application of the SiGe BiCMOS devices in the satellite electronic system and the design of the radiation hardening.