一种提高SOI电光开关消光比的优化设计 |
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引用本文: | 王皓,瞿鹏飞,田自君,向鹏飞,孙力军.一种提高SOI电光开关消光比的优化设计[J].半导体光电,2015,36(3):375-378. |
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作者姓名: | 王皓 瞿鹏飞 田自君 向鹏飞 孙力军 |
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作者单位: | 重庆光电技术研究所,重庆,400060 |
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摘 要: | 针对电流注入型SOI光开关在切换时难以克服的消光比变差的问题,提出了一种非对称的开关结构设计.然后依照实际器件的结构建立了SOI光开关的3D光学模型,对光开关中3D光场传输和输出光功率进行了模拟与分析.最后运用该模型对SOI光开关在电流切换时的消光比变化的问题进行了比较深入的研究,计算结果表明,提出的非对称的开关结构可以将SOI电光开关的消光比提高5 dB左右.
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关 键 词: | Si基光子集成 SOI 电光开关 消光比 3D光学仿真 |
收稿时间: | 2014/10/9 0:00:00 |
Optimal Design for Extinction Ratio of SOI Electro-optical Switch |
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Abstract: | A new asymmetric structure design was proposed for the extinction ratio enhancement of a SOI optical switch employing carrier injection effect.A 3D-BPM model was established according to the actual device structure which can give the 3D full view of the optical-field distribution in the SOI optical switch.Using this model,detailed analysis was performed on the extinction ratio of the SOI electro-optical switch after current injection.It is indicated that the extinction ratio of the optical switch can be improved by 5dB by employing the asymmetric structure design. |
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Keywords: | Si photonic integration SOI optical switch extinction ratio 3D optical simulation |
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