|
|||||
|
|
| 2.5Gb/s CMOS低噪声有源电感反馈跨阻放大器 | |
| 引用本文： | 韩良,刘晓宁,白涛,李华.2.5Gb/s CMOS低噪声有源电感反馈跨阻放大器[J].固体电子学研究与进展,2008,28(3). |
| 作者姓名： | 韩良 刘晓宁 白涛 李华 |
| 作者单位： | 1. 哈尔滨工业大学微电子中心,哈尔滨,150001;哈尔滨工业大学(威海)微电子中心,山东,威海,264209 2. 哈尔滨工业大学(威海)微电子中心,山东,威海,264209 3. 中国兵器集团214研究所,安徽,蚌埠,233042 |
| 摘 要： | 分析各种结构前置放大器性能的基础上,给出了一个应用于2.5 Gbit/s光纤通信系统的,基于CMOS工艺的共栅结构跨阻放大器。为了减小输入等效噪声电流和提高带宽,采用了有源反馈和有源电感代替传统结构中的电阻反馈。测试结果表明,该电路具有61.8 dB的跨阻增益,2.01 GHz的带宽,输入等效噪声电流为9.5 pA/Hz～(1/2),核心电路功耗仅为3.02 mW。 |
| 关 键 词： | 互补型金属氧化物半导体 跨阻放大器 有源电感 低噪声 |
A 2.5 Gb/s CMOS Low Noise Transimpedance Amplifier with Active Feedback |
|
| HAN Liang,LIU Xiaoning,BAI Tao,LI Hua.A 2.5 Gb/s CMOS Low Noise Transimpedance Amplifier with Active Feedback[J].Research & Progress of Solid State Electronics,2008,28(3). | |
| Authors: | HAN Liang LIU Xiaoning BAI Tao LI Hua |
| Affiliation: | HAN Liang1,2 LIU Xiaoning2 BAI Tao3 LI Hua2(1Microelectronic Center of Harbin Institute of Technology,Harbin,150001,CHN)(2Microelectronic Center of Harbin Institute of Technology at Weihai,Weihai,Sh,ong,264209,CHN)(3China North Industries Group Corporation No.214 Institute,Bengbu,Anhui,233042,CHN) |
| Abstract: | Based on the analysis of the topology of every preamplifier,a CMOS common-gate(CG) transimpedance amplifier,which can be used in 2.5 Gbit/s optical communication system,is presented.In order to reduce the input equivalent noise current and enlarge the-3 dB bandwidth,an active feedback and active inductor are used instead of conventional resistor feedback.Measured results show the transimpedance gain is 61.8 dB,the bandwidth is 2.01 GHz,the input equivalent noise current is 9.5 pA/Hz and the power consumptio... |
| Keywords: | CMOS transimpedance amplifier active inductor low noise |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
