| 微波毫米波宽带单片低噪声放大器 |
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| 引用本文： | 彭龙新,李建平.微波毫米波宽带单片低噪声放大器[J].固体电子学研究与进展,2008,28(2):203-207. |
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| 作者姓名： | 彭龙新 李建平 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6～18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRout≤2.0,1分贝压缩点输出功率P1dB≥11dBm。第二种放大器的工作频带为26～40GHz,测得增益G≥17dB,噪声系数NF约为2.0dB,输入、输出驻波VSWR≤2.5,1分贝压缩点输出功率P1dB≥10dBm。两种电路的测试结果验证了设计的正确性。
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| 关 键 词： | 宽带反馈放大器 低噪声 单片集成电路 |
Wide Band MIMIC Low Noise Amplifier |
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| PENG Longxin,LI Jianping.Wide Band MIMIC Low Noise Amplifier[J].Research & Progress of Solid State Electronics,2008,28(2):203-207. |
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| Authors: | PENG Longxin LI Jianping |
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| Affiliation: | PENG Longxin LI Jianping(Nanjing Electronic Devices Inst.,Nanjing,210016,CHN) |
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| Abstract: | Two kinds of wideband MIMIC low noise amplifiers were designed and fabricated using 0.25 μm GaAs PHEMT processes and feedback technology.The 6.0～18 GHz LNA achieved a power gain of 21 dB with good flatness of only ±1.0 dB,typical noise figure of 2.0 dB,input VSWR of better than 1.5,and output VSWR of better than 2.0,output P1dBpower of more than 11 dBm.The other LNA was measured from frequency 26 to 40 GHz.It had over 17 dB gain,2.0dB typical noise figure,under 2.5 input and output VSRW and 1 dB compression gain more than 10 dBm.The measured results of the two MIMIC LNAs agreed well with the designs'. |
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| Keywords: | broadband feedback amplifier low noise MIMIC |
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