| 纳米触头下位错生成的临界载荷 |
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| 引用本文： | 张传立,周思柱.纳米触头下位错生成的临界载荷[J].湖北工业大学学报,2004,19(4):16-18. |
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| 作者姓名： | 张传立 周思柱 |
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| 作者单位： | 长江大学机械工程学院,湖北,荆州,434023 |
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| 摘 要： | 分析了理想圆柱形纳米触头下的弹性应力场分布，并结合滑移原子层上耦合的本构关系，确定了滑移面位置及滑移面上产生非稳定滑移(位错生成)的临界载荷．分析了不同的材料参数对滑移面位置和位错产生的临界载荷的影响．
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| 关 键 词： | 纳米硬度实验 位错生成 滑移面 临界载荷 耦合 |
| 文章编号： | 1003-4684(2004)08-0016-03 |
| 修稿时间： | 2004年4月23日 |
Critical Load of Dislocation Nucleation Beneath the Nano-indenter |
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| ZHANG Chuan-Li,ZHOU Si-zhu.Critical Load of Dislocation Nucleation Beneath the Nano-indenter[J].Journal of Hubei University of Technology,2004,19(4):16-18. |
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| Authors: | ZHANG Chuan-Li ZHOU Si-zhu |
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| Abstract: | Dislocation nucleation under an idealized cylinder nanoindenter is analyzed by combination of the elastic stress field distribution beneath the indenter and the coupled constitutive relation on the slip plane. The location and the orientation of the slip plane and the critical load for the dislocation nucleation are determined in this analysis. Several typical materials are selected to illustrate the material effect, the results shows that material parameters have significant effects on the critical load of dislocation nucleation and the position of slip plane. |
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| Keywords: | nano hardness experiment dislocation slip plane critical load |
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