N型Ni基SiC欧姆接触比接触电阻的精确求解

精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率，用其代替WKB近似计算的隧穿几率精确提取比接触电阻．针对N型Ni基SiC欧姆接触的实验结果进行了计算比较，结果表明采用该方法提取的比接触电阻比采用WKB近似计算的传统方法更加精确和符合实际情况．

Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC

The specific contact resistance of ohmic contact is deduced accurately based on the electron tunneling probabilities through the triangular barrier to be solved by the one-dimensional time-independent Schrdinger equation. The experimental results of Ni based ohmic contacts on the N-type SiC are compared with that of the simulation. The proposed method has the advantages over the WKB approximation of better accuracy and adaptation to SiC ohmic contacts.