| 低压MOCVD生长ZnO单晶薄膜的制备与性质 |
| |
| 引用本文： | 叶建东,顾书林,朱顺明,胡立群,陈童,秦峰,张荣,施毅,沈波,江若琏,郑有炓.低压MOCVD生长ZnO单晶薄膜的制备与性质[J].固体电子学研究与进展,2002,22(4):421-424. |
| |
| 作者姓名： | 叶建东 顾书林 朱顺明 胡立群 陈童 秦峰 张荣 施毅 沈波 江若琏 郑有炓 |
| |
| 作者单位： | 南京大学物理系,210093 |
| |
| 基金项目： | 国家重点基础研究规划 (G0 0 1CB3 0 95 )，国家自然科学基金，国家 863计划 (2 0 0 2 AA3 110 60 ) |
| |
| 摘 要： | 利用 LP-MOCVD生长技术 ,采用 Zn(C2 H5) 2 作 Zn源和 CO2 作氧源 ,在 (0 0 0 2 )蓝宝石衬底上获得了沿 c轴取向高度一致的 Zn O单晶薄膜。通过对其吸收谱的曲线拟合 ,得到室温下 Zn O薄膜的光学带隙为 3 .2 45e V。在样品的室温光荧光谱 (PL)中观察到对应于带边发射的较强的发光峰 ,对样品中蓝带的产生原因进行了讨论
|
| 关 键 词： | 氧化锌 金属有机物化学汽相沉淀 X射线衍射 光致发光 吸收 |
| 文章编号： | 1000-3819(2002)04-421-04 |
| 修稿时间： | 2001年12月25 |
ZnO Thin Film Prepared by Low Pressure MOCVD Method |
| |
| YE Jiandong,GU Shulin,ZHU Shunmin,HU Liqun,CHEN Tong,QIN Feng,ZHANG Rong,SHI Yi,SHEN Bo,JIANG Ruolian,ZHENG Youdou.ZnO Thin Film Prepared by Low Pressure MOCVD Method[J].Research & Progress of Solid State Electronics,2002,22(4):421-424. |
| |
| Authors: | YE Jiandong GU Shulin ZHU Shunmin HU Liqun CHEN Tong QIN Feng ZHANG Rong SHI Yi SHEN Bo JIANG Ruolian ZHENG Youdou |
| |
| Abstract: | High quality c axis oriented single crystal ZnO films have been successfully grown on the (0002) sapphire substrates by Low Pressure MOCVD using Zn(C 2H 5) 2 and CO 2 as sources.The crystallinity and the orientation of the films were studied by X ray diffraction technique.The lattice constant for the ZnO film on the sapphire substrate is 0.5218 nm,which is a bit higher than the reported value in ZnO film.The optical band gap is about 3.245 eV by simulating the data of the absorption spectrum.The edge emission band has been observed obviously in the PL spectrum and the origin of the blue emission band has been also revealed and discussed. |
| |
| Keywords: | ZnO metal organic chemical vapor deposition(MOCVD) X ray diffraction photoluminescence absorption |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
