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1.
F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
2.
In the present work we have studied the effect of Na on the properties of graded Cu(In1−xGax)Se2 (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×1018–2.5×1019 cm−3) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively. 相似文献
3.
《Ceramics International》2022,48(14):20194-20200
In this paper, TCO (Transparent Conductive Oxide) incorporating ultrathin Ag intermediate film is proposed as a new buffer layer to enhance the efficiency of CIGS thin-film solar cells (TFSCs). In this regard, versatile multilayer thin-films based on ZnO/Ag/ZnO and ITO/Ag/ITO structures were deposited on glass using RF magnetron sputtering technique to determine the optoelectronic parameters of the multilayer structures. The elaborated samples were then characterized using SEM, EDS, XRD, and UV–Visible absorption spectroscopy techniques to investigate the structure morphological, optical, and electronic properties. The deposited multilayer thin-films showed amorphous-like structure and exhibited a broadband absorbance over the visible and even NIR spectrum ranges, indicating its potential application as alternative buffer layers for thin-film solar cells. In this context, TCO/Ag/TCO/CIGS solar cells have been numerically investigated using the deposited multilayer optoelectronic properties. It was revealed that the estimated efficiency of the ZnO/Ag/ZnO/CIGS-based solar cell could reach 18.5% with an open circuit voltage of 0.7 V and a short-circuit current density of 34.8 mA/cm2. The performances exhibited by the investigated solar cell demonstrated that ZnO/Ag/ZnO multilayer can be used as an alternative to the conventional CdS buffer layer for developing high-performance non-toxic CIGS solar cells. 相似文献
4.
Mirjam Theelen Vincent Hans Nicolas Barreau Henk Steijvers Zeger Vroon Miro Zeman 《Progress in Photovoltaics: Research and Applications》2015,23(5):537-545
Unencapsulated CIGS solar cells with high and low contents of sodium (Na) and potassium (K) were simultaneously exposed to damp heat and illumination. The solar cells with a high alkali (Na, K) content exhibited higher initial conversion efficiencies, but degraded severely within 100 h, while the alkali poor samples kept relatively stable performance under damp heat and illumination. The degradation of the samples with a high alkali content resulted in the formation of sodium rich spots on the top ZnO:Al surface of the samples. This is likely caused by light‐induced Na+ migration via the grain boundaries in the absorber to the depletion region, where the Na+ accumulated. This allowed subsequent Na+ transport through the depletion region due to the lowering of the internal electric field caused both by the Na+ accumulation and illumination. The migration resulted in the formation of shunt paths, which reduced the shunt resistance and open circuit voltage. Furthermore, ingression of water into the ZnO:Al is expected to be responsible for a slow but steady increase in series resistance for both high and low alkali solar cells. Additionally, sodium migration led to a severe increase of the series resistance in case of alkali rich samples. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
5.
Gerhard Heise Andreas Brner Marcel Dickmann Marina Englmaier Andreas Heiss Matthias Kemnitzer Jan Konrad Regina Moser Jrg Palm Helmut Vogt Heinz P. Huber 《Progress in Photovoltaics: Research and Applications》2015,23(10):1291-1304
In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)2) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm2). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm2 sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
6.
Amaury Delamarre Myriam Paire Jean‐Franois Guillemoles Laurent Lombez 《Progress in Photovoltaics: Research and Applications》2015,23(10):1305-1312
We investigate photoluminescence and electroluminescence (PL and EL) emission images from Cu(In,Ga)Se2‐based solar cells by means of a Hyperspectral Imager. Using the generalized Planck's law, maps of the effective quasi‐Fermi level splitting Δμeff in absolute values are obtained. A good agreement is found between the spatially averaged splitting in PL and the global open‐circuit voltage. However, from a local carrier transport discussion, we conclude that the equality does not hold locally. The spatial variations are rather attributed to local depth variations of the quasi‐Fermi level splitting due to material properties spatial fluctuations. By comparing PL and EL emissions, we discuss qualitatively the local effective lifetimes and collection efficiencies. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
7.
Roland Mainz Alfons Weber Humberto Rodriguez‐Alvarez Sergiu Levcenko Manuela Klaus Paul Pistor Reiner Klenk Hans‐Werner Schock 《Progress in Photovoltaics: Research and Applications》2015,23(9):1131-1143
Ga segregation at the backside of Cu(In,Ga)Se2 solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu–In–Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real‐time synchrotron‐based X‐ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross‐sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In–Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu–In–Ga phase. Surprisingly, CuInSe2 starts to form at the surface on top of the In–Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga‐rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 min reached conversion efficiencies of up to 14.2 % (total area, without anti‐reflective coating). The evolution of the Cu(In,Ga)Se2 diffraction signals reveals that the minimum process time for high‐quality Cu(In,Ga)Se2 absorbers is limited by cation ordering rather than Se incorporation. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
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9.
Dong‐Won Lee Won‐Ju Cho Jun‐Kwang Song Oh‐Yun Kwon Won‐Hee Lee Chi‐Hong Park Kyung‐Eun Park Heesoo Lee Yong‐Nam Kim 《Progress in Photovoltaics: Research and Applications》2015,23(7):829-837
High‐temperature‐induced and humidity‐induced degradation behaviors were investigated through the failure analysis of encapsulated Cu(In,Ga)Se2 (CIGS) modules and non‐encapsulated CIGS cells. After being exposed to high temperature (85 °C) for 1000 h, the efficiency loss of CIGS modules and the resistivities of the aluminum‐doped zinc oxide (AZO) layer, CIGS layer, and Mo layer were slightly increased. After damp heat (DH) testing (85 °C/85% RH), the efficiency of some modules decreased significantly accompanied by discoloration, and in these areas, the resistivity of the AZO layers increased markedly. The causes of degradation of CIGS cells after high temperature and DH tests were suggested through X‐ray photoelectron spectroscopy analysis. The high‐temperature‐induced degradation behaviors were revealed to be increases in series resistance of the CIGS cells, due to the adsorption of oxygen on the AZO, CIGS, and Mo layers. The degradation behavior after DH (85 °C/85% RH) exposure was caused by the adsorption of oxygen, as well as the generation of Zn(OH)2 due to water molecules. In particular, the humidity‐induced degradation behavior in discolored CIGS modules was ascribed to the generation of Zn(OH)2 and carboxylic acids in the AZO layer, due to a chemical reaction between the AZO, ethylene‐vinyl acetate copolymer, and water. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
10.
Phase evolution during the synthesis of Cu(InGa)Se2 from glass/Mo/(In1 − xGax)2Se3/CuSe bilayer precursors were investigated by in-situ high-temperature X-ray diffraction. With Se overpressure, CuSe was transformed to CuSe2 at 220 °C. The CuSe2 phase returned to CuSe by releasing Se at its peritectic point of 330 °C, where the formation of Cu(InGa)Se2 phase was initiated as well. Rapid thermal processing of bilayer precursors showed the potential of fast formation of Cu(InGa)Se2 within 2–5 min reaction with fairly uniform Ga and In depth profile. Further annealing with Se overpressure caused the formation of MoSe2 at the interface of Mo and Cu(InGa)Se2. 相似文献