Rear‐Passivated Ultrathin Cu(In,Ga)Se2 Films by Al2O3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

In this work, for the first time, the addition of aluminum oxide nanostructures (Al₂O₃ NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se₂ device (400 nm) fabricated using a sequential process, i.e., post‐selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al₂O₃ NSs with improved Se diffusion into the non‐uniformed metallic precursor due to the surface roughness resulting from the Al₂O₃ NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al₂O₃ NSs. The coverage and thickness of the Al₂O₃ NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na₂Se_X and phase separation. The passivation effect attributed to the Al₂O₃ NSs is well studied using the bias‐EQE measurement and J–V characteristics under dark and illuminated conditions. With the optimization of the Al₂O₃ NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se₂ devices, and providing significant opportunities for further applications.     

Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd1-xZnxS thin films

Cd1-xZnxS thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film sur-faces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution dia-grams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x)=0.59x2+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concen-tration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80％transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.     

基于CIGS薄膜太阳电池组件内级联工艺研究

采用532 nm激光一次完成P1、P2和P3三道划线,实现了柔性铜铟镓硒(CIGS)薄膜太阳电池组件的内级联。通过设计了P1、P2无缝连接结构,选择合适的绝缘、导电浆料,优化级联划线工艺,使单节子电池的死区总宽度减小到约450μm,并对激光划线的可靠性进行了评估。     

CIS(CIGS)薄膜材料的研究进展

以CIS(CIGS)作为吸收层的太阳能电池因其诸多优异性能而成为最具潜力的第三代太阳能电池.首先介绍了CIS(CIGS)薄膜的性能与掺杂对电池的影响,讨论了多种薄膜沉积技术及其优缺点,重点介绍了几种低成本制备技术及其影响因素,最后阐述了CIS(CIGS)薄膜电池的发展情况,并展望了CIS(CIGS)电池的发展趋势.     

Simulating material inhomogeneities and defects in CIGS thin‐film solar cells

Thin‐film CIGS solar cells are simulated using a hybrid model consisting of a distributed form of the analytical one diode model paired with a numerical finite element model of the d.c. conduction in the front contact layers. Variations in material quality over the substrate surface, from measured J–V curves, are incorporated into the model and the effects of cell width and window layer thickness are evaluated for homogeneous and inhomogeneous material quality. Furthermore, the effects of discrete shunt defects of different sizes are modelled, and in different positions on the cell surface. The results from optimizing cell width and window layer thickness show that the effects of material inhomogeneities include a small shift of the optimal parameters together with a less pronounced maximum. As expected, the defect size is important to the shunt conductance parameter of the resulting J–V curves. The passivating effect of the highly resistive ZnO layer is confirmed. Copyright © 2009 John Wiley & Sons, Ltd.     

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)2‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se2 solar cells

A ZnS/Zn_1‐xMg_xO buffer combination was developed to replace the CdS/i‐ZnO layers in in‐line co‐evaporated Cu(In,Ga)Se₂(CIGS)‐based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn_1‐xMg_xO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0·0 and 0·4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10 × 10 cm² modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn_1‐xMg_xO layers. Therefore, a large gain in the short‐circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i‐ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15·2% with 10 × 10 cm² mini‐modules were demonstrated. Copyright © 2009 John Wiley & Sons, Ltd.     

Compositional engineering of chemical bath deposited (Zn,Cd)S buffer layers for electrodeposited CuIn(S,Se)2 and coevaporated Cu(In,Ga)Se2 solar cells

A comparative study of chemical bath deposition (CBD) of ZnS, CdS, and a mixture of (Cd,Zn)S buffer layers has been carried out on electrodeposited CuIn(S,Se)₂ (CISSe) and coevaporated Cu(In,Ga)Se₂ (CIGS) absorbers. For an optimal bath composition with the ratio of [Zn]/[Cd] = 25, efficiencies higher than those obtained with CdS and ZnS recipes, both on co‐evaporated CIGS and electrodeposited CISSe, have been obtained independent of the absorber used. In order to better understand the (Cd,Zn)S system and its impact on the increased efficiency of cells, predictions from the solubility diagrams of CdS and ZnS in aqueous medium were made. This analysis was completed by in situ growth studies with varying bath composition by quartz crystal microbalance (QCM). The morphology and composition of the films were studied using scanning electron microscopy (SEM) and X‐ray photoelectron spectra (XPS) techniques. Preliminary XPS studies showed that films are composed of a mixture of CdS and Zn(O,OH) phases and not a pure ternary Cd_{1 − x}Zn_xS compound. The effect of the [Zn]/[Cd] molar ratio on properties of the corresponding CISSe and CIGS solar cells was investigated by current voltage [J(V)] and capacitance voltage [C(V)] characterizations. The origin of optimal results is discussed. Copyright © 2008 John Wiley & Sons, Ltd.     

Structure and electrical properties of Mo back contact for Cu(In, Ga)Se2 solar cells

Mo layers were deposited on soda lime glass via DC magnetron sputtering of a Mo target in a pure Ar atmosphere. The structure and electrical resistivity of Mo thin films, which may be varied by controlling the sputtering pressure, were investigated. The films showed (110) preferred orientation regardless of the working pressure. Films sputtered at low working pressure had low resistivity but adhered poorly to glass. A study of the deposition of a Mo bilayer was conducted. Optimum properties of the Mo bilayer were obtained when the bottom layer was deposited at 10 mtorr and the top layer was deposited at 2.5 mtorr. The extremely low resistivity of 6.57 μΩ-cm was obtained, which is better than other literatures. A Cu(In, Ga)Se₂ cell fabricated on a Mo film sputtered under optimized conditions showed 10.40% efficiency.     

Thermal stability of sputtered Mo/polyimide films and formation of MoSe2 and MoS2 layers for application in flexible Cu(In,Ga)(Se,S)2 based solar cells

Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex® films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex® structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)₂ absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 μΩ cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe₂ and MoS₂ layers, after selenization/sulfurization of the Mo/Upilex® structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.     

广州地区薄膜光伏并网电站性能研究

对3个薄膜光伏并网电站(12dTe、CIGS、a-Si,以下简称电站)进行了描述,对2008年2月～2009年1月的数据进行了分析.根据设计,电站每3min采集一次数据.对一年中3个电站的年发电量、月发电量、太阳辐照、光伏阵列的功率、电站效率、电站的功率损失进行了对比分析.对2008年3月21日(阴天)和24日(晴天)逆变器的工作状况进行了分析.结果表明:在2008年中,CdTe、CIGS、a-Si 3个电站每千瓦的发电量依次为994.74、954.42、936.07kWh.CdTe电站在2008年中发电量最多.通过对3个电站每个月发电量的分析发现温度对CIGS电站的发电量影响较大,适合在气温较低的地区使用.最后指出通过优化太阳电池的质量可以优化温度系数,也可以通过新颖的设计改善电站和太阳能组件(简称组件)的散热从而提高电站的效率.