Burkholderia thailandensis E264/pBMTL3-tdpR发酵生产抗癌药物ThailandepsinA的研究

在伯克氏菌Bth264野生株产新型抗癌药物Thailandepsin A以及调节基因tdp R正向调控Thailandepsin A生物合成的基础上,利用基因工程菌Bth264/p BMTL3-tdp R发酵生产Thailandepsin A,以提高产量。以0.5%乳糖为诱导剂,确定最佳诱导条件:发酵15 h添加乳糖,诱导时间6 h;通过单因素实验,确定葡萄糖和胰蛋白胨作为碳氮源、装液量65/250 m L以及接种量1%;同时结合优化发酵培养基进行发酵,Thailandepsin A产量达到252.14 mg·L-1,比优化前的产量提高56%;另外在发酵过程中,添加大孔树脂HP-20原位吸附产物,Thailandepsin A产量可达283.75 mg·L-1,比不加树脂提高13.8%;最后,基于RT-PCR和比较Ct值法,基因工程菌和野生菌相比,Thailandepsin A生物合成基因tdp B、tdp C1的转录水平分别提高11.4倍和6.0倍,对应的产量增加4.6倍,从而在很大程度上说明调节基因tdp R的过表达促进生物合成基因转录水平的提高以及产量的增加。     

低温水等离子体活化和表面接枝DMAE聚氯乙烯中空纤维膜研究

采用低温水等离子体技术，在三通道聚氯乙烯(PVC)膜表面接枝了甲基丙烯氧基苄基二甲基氯化铵(DMAE)单体，增强了膜亲水和抗菌性能。通过红外分析，表明DMAE成功接枝到了PVC膜上，水通量提高两倍，PVC-ir-H₂O膜(通过水等离子体处理的膜)对牛血清蛋白(BSA)的吸附能力下降67%，对BSA溶液的通量从7.7提高至40 kg?m^-2?h^-1，并且对BSA的截留能力不变。通过静态及动态抗菌实验，接枝后的PVC膜（PVC-g-PMAE膜）抗菌率达到100%，膜组件运行中的抗菌率也达到82%以上。在保证细菌截留率100%的同时，其渗透通量提高三倍。该膜表面修饰工程技术能实现膜表面的均一化改性，且绿色环保、操作简便、成本低，改性膜在饮用水处理领域，尤其是家用净水器中展现了很好的应用前景。     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Formation of Chlorotriophenoxy Radicals from Complete Series Reactions of Chlorotriophenols with H and OH Radicals

The chlorothiophenoxy radicals (CTPRs) are key intermediate species in the formation of polychlorinated dibenzothiophenes/thianthrenes (PCDT/TAs). In this work, the formation of CTPRs from the complete series reactions of 19 chlorothiophenol (CTP) congeners with H and OH radicals were investigated theoretically by using the density functional theory (DFT) method. The profiles of the potential energy surface were constructed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6-31+G(d,p) level. The rate constants were evaluated by the canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) contribution at 600–1200 K. The present study indicates that the structural parameters, thermal data, and rate constants as well as the formation potential of CTPRs from CTPs are strongly dominated by the chlorine substitution at the ortho-position of CTPs. Comparison with the study of formation of chlorophenoxy radicals (CPRs) from chlorophenols (CPs) clearly shows that the thiophenoxyl-hydrogen abstraction from CTPs by H is more efficient than the phenoxyl-hydrogen abstraction from CPs by H, whereas the thiophenoxyl-hydrogen abstraction from CTPs by OH is less impactful than the phenoxyl-hydrogen abstraction from CPs by OH. Reactions of CTPs with H can occur more readily than that of CTPs with OH, which is opposite to the reactivity comparison of CPs with H and OH.     

Experimental research on dynamic response of PZT-5H under impact load

In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge.     

利用HFC网络开展VoIP业务

本文首先介绍了VoIP的原理、相关协议．然后介绍了VoIP业务在HFC网络应用的业务环境和体系结构。并对其中的功能实体进行描述和说明。最后介绍一个具体的业务实例。     

基于SAA7114H的视频图象采集系统的设计

介绍一种高度集成并具有广泛通用性的视频图象信号采集系统。系统的开发采用了功能强大的视频解码芯片SAA7114H和可编程逻辑门阵列器件(FPGA)，并考虑了在线编程的模式。文中给出了YUV色彩空间与RGB色彩空间的转换公式，经验证效果很好。在实际应用中，该系统作为前端图象采集部分取得了良好的效果。     

会议电视系统混网设计中的问题及解决方案

从原理上对H.320系统和H．323系统的混合组网设计中的问题作了深层次的探讨，并提出了针对混合网中的问题和基于网络优化的一些解决思路。     

X80焊管H_2S环境应力腐蚀开裂行为研究

采用三点弯曲加载法和微电极扫描测试技术,研究了X80高强度级管线钢及其焊缝区的抗H2S环境应力腐蚀开裂(SSCC)行为。测定了焊接接头的显微硬度分布,分析了显微组织结构、力学性能及抗腐蚀性能之间的相关性。研究表明,热影响区(HAZ)对应力腐蚀开裂最为敏感,母材的纵向和横向取样对应力腐蚀敏感性影响不显著,薄壁管材比厚壁管材有较好的抗H2S环境应力腐蚀性能。HAZ晶粒粗大、硬度高,局部腐蚀倾向大,由此导致该区SSCC敏感性高。