烧成及热处理工艺对钛酸锶铅基热敏材料性能及显微结构的影响

研究了烧成及热处理工艺对钛酸锶铅基热敏材料的阻温特性及显微结构的影响。通过扫描电镜（ＳＥＭ）和能量分散仪（ＥＤＡＸ）分析了材料的显微结构及不同形貌晶粒的成份。通过对组成、烧成及热处理工艺的控制，可得到具有Ｖ型ＰＴＣＲ特性的热敏材料。     

PTCR热敏电阻新原料的探讨EI

研究了以工业生产中间产物偏钛酸为原料生产ＰＴＣＲ（正温度系数热敏电阻）的一些问题。其中主要包括偏钛酸作为生产ＰＴＣＲ热敏电阻原料的适宜煅烧温度、原材料的预磨情况等对合成瓷料性能的影响。结果表明：瓷料半导化的条件与偏钛酸的煅烧温度及原料预磨情况密切相关。低于８００℃的一定温度范围内预先对偏钛酸球磨后煅烧或８００℃以上直接煅烧，均可实现瓷料的半导化。     

钛酸钡中的硼间隙及其对PTCR效应的影响

通过B2O3蒸汽掺杂，钛酸钡晶胞膨胀，表明硼离子可以进入钛酸钡晶格中形成硼间隙。B2O3蒸汽掺杂使含Y钛酸钡陶瓷室温电阻率下降，升阻比提高。同样的烧结条件下，钛酸钡陶瓷的PTCR效应随B2O3蒸汽掺杂源的浓度升高而升高。硼间隙和／或相关缺陷络合物可以形成电子捕获中心，从而提高PTCR效应。     

BaTiO3基PTC陶瓷的研究现状及展望

PTC陶瓷（正温度系数热敏陶瓷）具有电阻率随温度升高而增大的特点，是近年来发展迅速的新型电子材料之一，其在低压领域的使用更是一直为各国研究者所关注。阐述了PTCR的半导电性能，并着重介绍了BaTiO3基低阻PTC陶瓷的研究现状和展望。     

不同玻璃料对PTC陶瓷性能的影响

研究了AST和ASL两种玻璃料对PTC陶瓷性能的影响,发现在1280℃～1340℃的烧成范围内,添加ASL的样品其室温电阻要比添加AST的样品大,而其电阻—温度特性要比添加AST的样品好,且两种样品的晶粒尺寸及晶粒均匀度有明显差别.研究结果表明,两种样品性能上的差异与它们显微结构上的差异有着密切关系.     

Influence of doping BiYO3 and Nb2O5 on PTCR characteristics of BaTiO3 thermistor ceramics

Nb₂O₅-doped (1 − x)Ba_0.96Ca_0.04TiO₃-xBiYO₃ (where x = 0.01, 0.02, 0.03 and 0.04) lead-free PTC thermistor ceramics were prepared by a conventional solid state reaction method. X-ray diffraction, scanning electron microscope, Agilent E4980A and resistivity-temperature measurement instrument, were used to characteristic the lattice distortion, microstructure, temperature dependence of permittivity and resitivity-temperature dependence. It was revealed that the tetragonality c/a of the perovskite lattice, the microstructure and the Curie temperature changed with the BiYO₃ content. In order to decrease the room temperature resistivity, the effect of Nb₂O₅ on the room temperature resistivity was also studied, and its optimal doping content was finally chosen as 0.2 mol%. The 0.97Ba_0.96Ca_0.04TiO₃-0.03BiYO₃-0.002Nb₂O₅ thermistor ceramic exhibited a low ρ_RT of 3.98 × 10³ Ω cm, a typical PTCR effect of ρ_max/ρ_min > 10³ and a T_c of 153 °C.     

Additive manufacturing of barium titanate based ceramic heaters with positive temperature coefficient of resistance (PTCR)

Lanthanum/manganese doped barium titanate (BT) based PTCR functional heater elements/structures were fabricated with desirable electrical properties for the first time using Additive Manufacturing (AM). 3D printed components of varying size and shape and prototype honeycomb lattices with high density were achieved through AM. Aqueous, less organic containing (2.5 wt% additives versus 10–30 wt% added typically), eco-friendly ink formulations were developed with suitable rheological properties for 3D printing. For BT prints, the sintered densities of the 3D ceramic parts were found to be >99% TD, highest reported value so far. The microstructure, electrical properties and heating characteristics of the printed PTCR components were studied in detail and their thermal stability evaluated using infrared imaging and benchmarked against commercial PTCR heating element. The heating behaviour of the solid and porous 3D printed components was demonstrated to be similar, paving the way for light weight (?47% reduction in weight) heaters suitable for automotive/aerospace applications and less materials wastage during device fabrication.     

(Ba,Ca)TiO3 PTCR Ceramics with LaNiO3 Thin-Film Electrodes: Preparation and Characterization of the Interface

Conductive LaNiO₃ thin film electrodes were deposited by chemical solution deposition (CSD) from nitrate solutions onto polycrystalline Al₂O₃ and (Ba,Ca)TiO₃ PTCR ceramic substrates. The electrical properties of the LaNiO₃ thin film on Al₂O₃ and of the interface consisting of LaNiO₃ and the semiconductive oxide ceramic were investigated. The deposited LaNiO₃ films were about 250 nm thick and consisted of nanosized particles. The resistivity of the LaNiO₃ film was about 3 × 10^-3cm at 20°C. The PTCR ceramic consisted of m sized particles and exhibited an electronic resistivity of about 10 cm at 20°C and a steep increase of the resistivity of a few orders of magnitude above the Curie point at about 120°C. The electrical properties of the LaNiO₃/PTCR interface were dominated by the properties of a barrier layer between the PTCR ceramic and the LaNiO₃ electrode. The potential dependence of the impedance indicated that the barrier layer consisted of a depletion layer within the PTCR ceramic, when the flat band potential of LaNiO₃ on the PTCR ceramic at about –250 mV was exceeded. Additionally the formation of an insulating layer at the LaNiO₃ electrode has to be taken into account.     

钛酸钡系PTCR与氢气相互作用的研究

研究钛酸钡系ＰＴＣＲ与氢气的相互作用，实现了烧成后陶瓷ＰＴＣＲ样品的氢处理可控制降阻。通过测试降阻后样品电性能的变化以及阻值长期稳定性，确认了氢处理降阻的可行性。研究了ＰＴＣＲ与氢气相互作用过程，并从晶界势垒变化角度，探讨了ＰＴＣＲ与氢气相互作用实现降阻的机理。     

水基流延制备片式PTCR陶瓷的研究

采用sol-gel法制备纳米BaTiO3基PTCR粉体,并以其为原料,采用水基流延成型工艺制备片式PTCR。研究了在sol-gel法制备BaTiO3粉体中,施受主元素含量、陶瓷的烧成温度与PTC效应、晶粒尺寸的关系以及水基流延工艺中各种添加剂对浆料和膜片性能的影响。结果表明:以纳米BaTiO3粉体为原料、水基流延的片式PTCR坯片,在1240℃下就能半导化,所得陶瓷样品的升阻比高于104,温度系数大于13%℃–1,平均晶粒尺寸小于2μm。