新型蓝绿发光材料ZnSe／BeTe超晶格的能带剪裁

由于器件的快速退化，101.5小时似乎成了Znse基蓝绿色半导体激光器难于逾越的寿命极限。分析退化机制，发现在强电流注入的半导体激光器中，热退化具有重要影响。研究表明，用作载流子限制层的宽带Ⅱ-Ⅵ族四元合金（如ZnMgSSe）只能对ZnSe中的电子有效地限制，无法对空穴很好地限制;而对BeTe，却只能对空穴进行有效的限制，无法对电子很好地限制。这导致ZnSe（或BeTe）活性层空穴（或电子）漏电发热，引起退化。本文提出以ZnSe／BeTe超晶格为蓝绿发光层，并用包络函数理论具体计算了阱宽、垒宽对载流子能级的不同影响，考察了ZnSe、BeTe厚度比和超晶格周期对带隙、载流子限制能力的调节。为研制新型长寿命蓝绿色半导体激光器提供了一条新的途径。     

Tilted superlattice composition profile determined by photoluminescence and thermal disordering

The composition profile of an (AlAs)_1/2(GaAs)_1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al_0.40Ga_0.60As to Al_0.60Ga_0.40As.     

DX centers in AlxGa1-xAs bulk alloy,AlAs/GaAs ordered,and disordered superlattices

Properties of theDX centers in Al_0.5Ga_0.5As bulk alloy (b-AL), (AlAs)₂ (GaSa)₂ ordered superlattice (o-SL) and (AlAs) _m (GaAs) _n disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy (DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement. Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San Jose State University, San Jose, California 95192-0084, USA.     

Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds

Theoretical design of pseudo-ternary and quaternary alloys by superlattice structures consisting of (Zn,Cd)(S,Se) binary II–VI compounds has been studied. For pseudo-ternary ZnCdS and ZnCdSe alloys, the superlattices with two layers in a cycle, i.e., ZnS/CdS and ZnSe/CdSe are considered, and for pseudo-quaternary ZnCdSSe alloy, the two superlattice structures with more than two layers in a cycle are considered. In order to design and evaluate these superlattices, the expression for the equilibrium in-plane lattice constant of these superlattices has been derived by minimizing the total elastic strain energy in the cycle. The combinations of layer thicknesses in a cycle and the effective bandgap of these superlattices have been calculated while the elastic strain effect was included. The usefulness of these superlattice structures has been evaluated.     

三层软磁镍超晶格薄膜的共振频率

为了提高磁性薄膜的共振频率,采用量子格林函数方法研究了具有反铁磁性和铁磁性层间交换耦合的三层软磁镍超晶格薄膜的共振频率,并分析了各向异性、层间交换耦合、外磁场和温度对三层软磁镍超晶格薄膜共振频率的影响.结果表明,共振频率随约化温度的升高而减小;各向异性只能影响对应子层的共振频率,且各向异性越大,共振频率越高;层间交换耦合只能影响与其连接的子层的共振频率,且层间交换耦合越大,共振频率越高;当约化温度升高时,各向异性和层间交换耦合对共振频率的影响程度减小.     

MOCVD外延Al2O3基AlGaN/GaN超晶格的结构和光学特性

通过X射线衍射分析、透射电镜观察、红外透射光谱分析、紫外-可见吸收光谱分析和光致发光试验,研究了用金属有机物化学汽相沉积（MOCVD）的方法,在带有GaN缓冲层的蓝宝石（Al2O3）衬底上生长的AlGaN/GaN超晶格材料的微观结构、光吸收性质和发光特性.X射线衍射结果表明,GaN基材料均为纤锌矿六方结构,薄膜具有良好的结晶质量,薄膜生长沿c轴择优取向.透射电镜观察表明,超晶格试样的周期结构分布均匀,实际周期为13.3nm，且观察到高密度的位错存在于外延膜中。通过光学试验数据，确定了试样的光学吸收边都是在370nm附近，理论计算显示试样为直接跃迁型半导体，禁带宽度约为3．4eV。试样的折射率随光子能量的增加而增加、随波长的增加而减小，计算表明消光系数的极小值位于370nm处。光致发光测试分析表明，超晶格有很好的发光性能，并发现存在黄带发光。     

L12型Al3Ti合金室温变形超位错的分解及计算机图像模拟

利用透射电子显微镜和计算机图像模拟技术研究了ＬＩ２型Ａｌ３Ｔｉ合金室温变形的位错核心结构，结果表明：α（１１０）超位错在｛１１１｝面上分解成两个α／３｛１１２｝型超偏位错，其间为超点阵内禀层错。     

Epitaxial growth and thermal-conductivity limit of single-crystalline Bi2Se3/In2Se3 superlattices on mica

Nano Research - Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide...     

介电超晶格研究进展

随着铁电薄膜制备技术和性能研究的发展，介电超晶格已受到人们的关注，本文简要介绍了有关介电超晶格的结构，性能及制作技术，并指出了存在的问题和可能的发展方向。     

RE-Mg-Ni系储氢合金高倍率放电性能研究现状

RE-Mg-Ni系储氢合金具有超晶格结构,其主相晶格单元是由一定比率的AB5单元和AB2单元沿c轴交替层叠排列而成。该类型合金自问世以来便以其高容量、易活化的优势受到人们的广泛关注,然而其循环稳定性及高倍率放电性能不尽人意。人们通过大量研究有效提高了其循环稳定性,使其基本满足了商业化要求。但是要将基于该负极材料的镍氢电池应用在混合动力汽车上,仍需改进其高倍率放电性能。系统分析了元素替代、多元合金化、制备工艺、化合物复合、表面处理等手段对RE-Mg-Ni系储氢合金晶体结构及高倍率放电性能的影响。其中元素替代是一种重要且有效的手段,文中分析了不同稀土元素及B侧元素的作用机制,结果表明,B侧组分采用Ni,Co,Mn,Al的储氢合金具有较好的性能。多元合金化是一种复杂的过程,不同元素间可能存在一定的协同作用,研究其作用机制也是下一步的工作重点。通过优化实验方案,综合使用多种改性手段,可以得到高倍率放电性能良好的RE-Mg-Ni系储氢合金,使其基本满足电动工具用镍氢电池的要求,并可望在以后的研究中进一步提高其高倍率放电性能,使其满足混合动力汽车用镍氢电池的要求,实现良好的经济和社会效益。