Nonlinearity in regulating the metal to insulator transition of ReNiO3 towards low temperature range

Among the existing material family of the correlated oxides, the rare earth nickelates (ReNiO₃) exhibit broadly adjustable metal to insulator transition (MIT) properties that enables correlated electronic applications, such as thermistors, thermochromics, and logical devices. Nevertheless, how to accurately control the critical temperature (T_MIT) of ReNiO₃ via the co-occupation of the rare-earth elements is yet worthy to be further explored. Herein, we demonstrate the non-linearity in adjusting the T_MIT of ReNiO₃ towards lower temperatures via introducing Pr co-occupation within ReNiO₃ (e.g., Pr_xNd_1-xNiO₃ and Pr_xSm_1-xNiO₃) as synthesized by KCl molten-salt assisted high oxygen pressure reaction approach. Although the T_MIT is effectively reduced via Pr substitution, it does not strictly follow a linear relationship, in particular, when there is large difference in the ionic radius of the co-occupation rare-earth elements. Furthermore, the most significant deviation in T_MIT from the expected linear relationship appears at an equal co-occupation ratio of the two different rare-earth elements, while the abruption in the variation of resistivity across T_MIT is also reduced. The present work highlights the importance to use adjacent rare-earth elements with co-occupation ratio away from 1:1 for achieving more linear adjustment in designing the metal to insulator transition properties for ReNiO₃.     

多晶硅表面金属催化化学腐蚀法制绒研究现状

在多晶硅太阳能电池的生产过程中, 金刚线切割技术(Diamond wire sawn, DWS)具有切割速度快、精度高、原材料损耗少等优点, 受到了广泛关注。金刚线切割多晶硅表面形成的损伤层较浅, 与传统的酸腐蚀制绒技术无法匹配, 金属催化化学腐蚀法应运而生。金属催化化学腐蚀法制绒具有操作简单、结构可控且易形成高深宽比的绒面等优点, 具有广阔的应用前景。本文总结了不同类型的金属催化剂在制绒过程中的腐蚀机理及其形成的绒面结构, 深入分析和讨论了具有代表性的银、铜的单一及复合催化腐蚀过程及绒面结构和电池片性能。最后对金刚线切割多晶硅片表面的金属催化化学腐蚀法存在的问题进行了分析, 并展望了未来的研究方向。     

Investigation on thermal conductivity and mechanical properties of Si3N4 ceramics via one-step sintering

High thermal conductivity Si₃N₄ ceramics were fabricated using a one-step method consisting of reaction-bonded Si₃N₄ (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)^-1 and 12.0 MPa m^1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si₃N₄ phase was observed, which can effectively confine O atoms into the β-Si₃N₄ lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si₃N₄ ceramics with a good combination of thermal conductivity and mechanical properties.     

High performance H2 sensor based on rGO-wrapped SnO2–Pd porous hollow spheres

Hydrogen (H₂) sensors based on metal oxide semiconductors (MOS) are promising for many applications such as a rocket propellant, industrial gas and the safety of storage. However, poor selectivity at low analyte concentrations, and independent response on high humidity limit the practical applications. Herein, we designed rGO-wrapped SnO₂–Pd porous hollow spheres composite (SnO₂–Pd@rGO) for high performance H₂ sensor. The porous hollow structure was from the carbon sphere template. The rGO wrapping was via self-assembly of GO on SnO₂-based spheres with subsequent thermal reduction in H₂ ambient. This sensor exhibited excellently selective H₂ sensing performances at 390 °C, linear response over a broad concentration range (0.1–1000 ppm) with recovery time of only 3 s, a high response of ～8 to 0.1 ppm H₂ in a minute, and acceptable stability under high humidity conditions (e. g. 80%). The calculated detection limit of 16.5 ppb opened up the possibility of trace H₂ monitoring. Furthermore, this sensor demonstrated certain response to H₂ at the minimum concentration of 50 ppm at 130 °C. These performances mainly benefited from the special hollow porous structure with abundant heterojunctions, the catalysis of the doped-PdO_x, the relative hydrophobic surface from rGO, and the deoxygenation after H₂ reduction.     

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C6F12O with a low global warming potential

Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF₃ with C₆F₁₂O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF₄ +C₆F₁₂O+O₂ mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film surface. Consequently, the etching characteristics of the C₆F₁₂O mixed plasma exhibited a lower etching rate, higher SiON/Si selectivity, lower plasma damage, and more vertical etched profiles than the conventional CHF₃ mixed plasma. In addition, the C₆F₁₂O gas can be recovered in the liquid state, thereby decreasing global warming. These results confirmed that the C₆F₁₂O precursor can sufficiently replace the conventional etching gas.     

Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method

A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.     

Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.     

Rectangular Section Control Technology for Silicon Steel Rolling

Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed.     

A review on some classes of algebraic systems

ABSTRACT

In this paper, we review some algebraic control system. Precisely, linear and bilinear systems on Euclidean spaces and invariant and linear systems on Lie groups. The fourth classes of systems have a common issue: to any class, there exists an associated subgroup. From this object, we survey the controllability property. Especially, from those coming from our contribution to the theory.