A Broadband Quadrature-Modulator in Standard 0.13 μm CMOS

A polyphase filtering topology is proposed which uses parallel switchable RC-networks for accurate broadband 90^∘ phasing. A 0.13μm CMOS prototype using the quadrature-generation network in a direct-conversion quadrature-modulator achieves a measured image-rejection ratio of −39 dBc or better in 0.6–2.5 GHz while consuming only 66 mW from a 2.2 V single supply. Esa Tiiliharjuwas born in Rovaniemi, Finland, in 1966. He received the M.Sc. degree in Information Technology in 1995, and the Lic.Tech degree in electrical engineering in 1998, both from Helsinki University of Technology, Finland. From 1996 to July 1997 he was employed as an assistant at Helsinki University of Technology. He has held a position as a research assistant since 1997, and he is currently working towards his Ph.D. degree in the Electronic Circuit Design Laboratory at Helsinki University of Technology. His research interests include the design of integrated low-power circuits for portable telecommunication applications. He has designed and measured several integrated circuits for this application area. He is the author or co-author of several internationally-refereed conference and journal publications on analog integrated circuits. Kari A.I. Halonenwas born in Helsinki, Finland, on May 23, 1958. He received the M.Sc. degree in electrical engineering from the Helsinki University of Technology (HUT) in 1982 and the Ph.D. degree in electrical engineering from the Katholieke Universiteit Leuven, Heverlee, Belgium, in 1987. From 1982 to 1984, he was with HUT as an Assistant and with the Technical Research Center of Finland as a Research Assistant. From 1984 to 1987, he was a Research Assistant with the E.S.A.T. Laboratory, Katholieke Universiteit Leuven, with a temporary grant from the Academy of Finland. Since 1988, he has been with the Electronic Circuit Design Laboratory, HUT, as a Senior Assistant from 1988 to 1990, and as the Director of the Integrated Circuit Design Unit of the Microelectronics Center from 1990 to 1993. He was on leave of absence during the academic year 1992–1993, acting as Research and Development Manager with Fincitec Inc., Finland. From 1993 to 1996, he was an Associate Professor, and since 1997, he has been a full Professor with the Faculty of Electrical Engineering and Telecommunications, HUT. He became the Head of Electronic Circuit Design Laboratory year 1998. He was the Technical Program Committee Chairman for the European Solid-State Circuits Conference in 2000. He is the author or coauthor of over 150 international and national conference and journal publications on analog integrated circuits, and holds several patents on analog integrated circuits. His research interests are in CMOS and BiCMOS analog integrated circuits, particularly for telecommunication applications. Dr. Halonen was an Associate Editor of the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS–PART I: FUNDAMENTAL THEORY AND APPLICATIONS from 1997 to 1999. He has been a Guest Editor for the IEEE JOURNAL OF SOLID-STATE CIRCUITS. He received the BeatriceWinner Award from the IEEE International Solid-State Circuits Conference in 2002.[c-halonen.eps]     

A Broadband Quadrature-Modulator with Integrated Baluns

A broadband direct-conversion quadrature-modulator has been implemented in 0.8 m SiGe with integrated baluns in its RF-signal paths. Measured performance includes IRR-values at better than –40 dBc in 0.75–3.6 GHz with output power levels in excess of –20 dBm. For this performance circuit draws 46 mA from a single 2.5 V supply.Esa Tiiliharju was born in Rovaniemi, Finland, in 1966. He received the M.Sc. degree in Information Technology in 1995, and the Lic.Tech degree in electrical engineering in 1998, both from Helsinki University of Technology, Finland.From 1996 to July 1997 he was employed as assistant at Helsinki University of Technology. He has been holding a position of a research assistant from 1997, and he is currently working towards the Ph.D. degree in the Electronic Circuit Design Laboratory at Helsinki University of Technology.His research interests include the design of integrated low-power circuits for portable telecommunication applications. He has designed and measured several integrated circuits for this application area. He is author or co-author for several international refereed conference and journal publications on analog integrated circuits.Kari A.I. Halonen was born in Helsinki, Finland, on May 23, 1958. He received the M.Sc. degree in electrical engineering from the Helsinki University of Technology (HUT) in 1982 and the Ph.D. degree in electrical engineering from the Katholieke Universiteit Leuven, Heverlee, Belgium, in 1987.From 1982 to 1984, he was with HUT as an Assistant and with the Technical Research Center of Finland as a Research Assistant. From 1984 to 1987, he was a Research Assistant with the E.S.A.T. Laboratory, Katholieke Universiteit Leuven, with a temporary grant from the Academy of Finland. Since 1988, he has been with the Electronic Circuit Design Laboratory, HUT, as a Senior Assistant from 1988 to 1990, and as the Director of the Integrated Circuit Design Unit of the Microelectronics Center from 1990 to 1993. He was on leave of absence during the academic year 1992–1993, acting as Research and Development Manager with Fincitec Inc., Finland. From 1993 to 1996, he was an Associate Professor, and since 1997, he has been a full Professor with the Faculty of Electrical Engineering and Telecommunications, HUT. He became the Head of Electronic Circuit Design Laboratory year 1998. He was the Technical Program Committee Chairman for the European Solid-State Circuits Conference in 2000. He is the author or coauthor of over 150 international and national conference and journal publications on analog integrated circuits, and holds several patents on analog integrated circuits. His research interests are in CMOS and BiCMOS analog integrated circuits, particularly for telecommunication applications.Dr. Halonen was an Associate Editor of the IEEE Transactions on Circuits and Systems–Part I: Fundamental Theory and Applications from 1997 to 1999. He has been a Guest Editor for the IEEE Journal of Solid-State Circuits. He received the BeatriceWinner Award from the IEEE International Solid-State Circuits Conference in 2002.     

A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18μm CMOS for OFDM-UWB

A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single （D2S） converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18μm RF CMOS process with an area of 1.74 mm^2 and only consumes 32 mA current （at 1.8 V） including the test associated parts.     

OFDM超宽带3.1-4.8GHz CMOS发射机设计

本文介绍一种应用于3.1-4.8GHz 多频带正交频分复用超宽带系统的低功耗射频CMOS发射机芯片的设计和实现。发射机系统主要由电压电流跨导级、正交上变频调制器、有源双转单转换器、输出增益可控功率放大器以及产生正交差分LO信号的除2除法器等模块组成。使用上调制器,双转单及输出放大器分段谐振技术解决3.1-4.8GHz宽带增益平坦度问题;使用源级电阻负反馈镜像跨导解决系统低电压高线性度问题;使用无源电感谐振双转单电路及增益可控放大器进行低功耗设计。测试结果表明,芯片能够提供-10.7到-3.1dBm的功率输出,并且在子带增益平坦度低于3dB;输出三阶交调量最高可达12dBm;不低于30dBc的载波抑制和35dBc以上的边带抑制。芯片采用Jazz 0.18μm射频CMOS工艺流片,包括ESD防护PAD在内芯片总面积为1.74mm2。 在1.8V的电源电压下,芯片总电流为32mA。     

A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18/zm RF CMOS process with an area of 1.74 mm~2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.