富锌条件下生长氮掺杂氧化锌薄膜的光学和电学性质

报道了采用等离子体辅助分子束外延方法(P-MBE),利用NO作为N源和O源,在c-面蓝宝石(c-Al₂O₃)衬底上外延生长了N掺杂ZnO薄膜。X射线衍射谱(XRD)和吸收谱中都出现了不同于未掺杂样品的特性,X射线光电子谱(XPS)中也发现了N的受主信号。但是在霍尔效应(Hall-effect)测量中,发现该样品并没有出现预期的p型导电特性,而是出现载流子浓度很高(2.15×10²⁰cm^-3)的n型导电特性。结合XPS结果和理论分析,认为在富Zn条件下生长会导致过量的填隙Zn原子,补偿了全部的受主后,又促使其出现了从半导体-金属的Mott转变。     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

Exciton—Phonon Scattering in CdSe／ZnSe Quantum Dots

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.     

高能Zn离子注入CaF2基质形成ZnO纳米粒子的机制、构型及电子结构

将高能Zn2+注入到CaF2介电基质中,在CaF2的表面下注入Zn2+浓度呈近似高斯分布,通过氧气氛后经热退火形成ZnO量子点.采用MaterialsStudio和Gaussian98W程序,结合实验结果计算分析了CaF2基质中ZnO纳米粒子的电子结构和光学性质.选取由4个ZnO原胞组成的超晶胞模型计算了ZnO纳米粒子的吸收光谱,理论结果与实验结果相符.对ZnO纳米粒子电子结构的研究结果表明,ZnO纳米粒子与CaF2基质的相互作用主要是ZnO表面的O与基质中Ca之间的作用,这种作用使ZnO纳米晶体的Fermi能级变窄,带隙相应减小;ZnO纳米粒子表面构型的变化对其本征吸收光谱没有影响,理论计算结果与实验值一致.     

Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector

The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (V_O) defects controlled by hydrogen peroxide (H₂O₂) solution treatment have been investigated. After H₂O₂ solution treatment, V_O concentration of ZnO QDs decreased. The H₂O₂ solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in V_O concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of V_O defects. The findings in this work clarify that the surface V_O defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing.     

高掺杂Ce,Gd(Y_(3-x-y)Ce_xGd_y)Al_5O_(12)荧光粉的发光下降及温度猝灭特性

采用高温固相法分别合成了不同Ce浓度掺杂的和固定Ce浓度为0.06不同Gd浓度掺杂的Y3Al5O12(YAG)系列荧光粉,通过测量其激发、发射光谱、漫反射光谱、荧光寿命和变温发射光谱,研究了掺杂元素的浓度对荧光粉发光性能的影响以及荧光粉发光的温度猝灭性质。研究结果表明:荧光粉发光强度随着Ce3+掺杂浓度和Gd3+掺杂浓度的提高均呈下降趋势。分析发现,荧光粉发光强度下降并非主要由浓度猝灭所引起,而是由于高浓度掺杂下发生YAG基质与Ce3+对激发光的竞争吸收,导致Ce3+对激发光的吸收量减少,从而影响发光强度。温度实验表明,随着温度的升高,荧光粉发光强度下降。Ce含量的改变对YAG:Ce荧光粉的热猝灭性质影响较小,Gd的掺杂使荧光粉的发射波长向长波方向移动,同时热猝灭现象严重。     

聚乙烯基咔唑与8-羟基喹啉铝混合体系的荧光衰减

报道了8－羟基喹啉铝和聚乙烯基咔唑薄膜及其混合体系膜的荧光衰减特性。聚乙烯基咔唑／8－羟基喹啉铝重量比100：4的混合膜在波长540nm和460nm处的荧光衰减时间分别为6．47ns和8．5ns。重量比100：10混合膜在波长540nm和460nm处的荧光衰减时间分别为5．5ns和7．9ns。上述两波长对应8－羟基喹啉铝和聚乙烯基咔唑分子荧光发射。混合体系的荧光寿命仅为8－羟基喹啉铝分子荧光的40％，同时也低于聚乙烯基咔唑14ns的荧光寿命。荧光寿命的减少反映出两种分子之间存在较强的相互作用或形成了分子复合体。     

ZnCdse－ZnSe多量子阱中的激子发光

在７７－３００Ｋ温度下研究了Ｚｎ（１－ｘ）ＣｄｘＳｅ－ＺｎＳｅ多量子阱（ＭＱＷｓ）的光致发光特性．首次在７７Ｋ，Ａｒ离子激光器的４５７．９ｎｍ激发下，在Ｚｎ（０．６８）Ｃｄ（０．３２）Ｓｅ－ＺｎｓｅＭＱＷｓ中观测到５个发光带，其中三个发光带被归因于不同的激子发射：即ｎ＝１重空穴（ＨＨ）激子；ｎ＝ｌ轻－重空穴（ＬＨ）激子和ｎ＝ＩＨＨ激子同时发射两个纵光学声子的复合发光，并且，；ｎ＝１ＨＨ激子发光可延续至室温．     

白光发光二极管的制备技术及主要特性

利用发射波长为470nm的蓝光发光二极管作为基础光源，通过荧光粉转换方法制备白光发光二极管，荧光粉主要采用稀土激活的铝酸盐Y3Al5Ol2：Ce3 (YAG)。在工作电流为15mA条件下，所研制的白光LED的法向光强为2890mcd；色坐标为x=0.29，y=0．33；显色指数为77；流明效率为14．9lm／w。研究制备了不同色温的白光LED，色温范围从2700～8000K，研究了色温与色坐标之间的对应关系。并且与国外同类产品进行比较。部分指标已经超过了国外同类产品水平。