STUDY OF THE FOUR-WAVE MIXING DIFFRACTION EFFICIENCY OF LONGITUDINAL-FIELD MULTIPLE-QUANTUM-WELL PHOTOREFRACTIVE DEVICE GROWN AT LOW TEMPERATURE

We investigate the relationship between the beam intensity and the four-wave mixing diffraction efficiency of longitudinal-field multiple-quantum-well(LMQW) photorefractive device grown at low temperature. The optimum beam intensity is found. We also explain the different mechanisms of the effect of beam intensity on the diffraction efficiency of the LMQW device and the transverse-field MQW device. Some advice on how to improve the diffraction efficiency is given.     

The mechanism research of the Cr^4＋Nd^3＋：YAG laser

The 946nm diode-pump microchip self-Q-switched laser of a chromium and neodymium codoped yttrium aluminum garnet crystal material (Cr^{4+}Nd^{3+}:YAG) is studied, especially about its physical mechanism of operation. The {}^4F_{3/2}→{}^4I_{9/2} transition of Nd^{3+} ion is beneficial to achieving laser oscillation in a quasi-three-level system based on coating the cavity mirrors of the microchip with films that suppress the 1064nm operation and enhance the 946nm laser. The Cr^{4+} ion is a saturable absorber. The initial loss N_{t1} is high, which acts as the threshold for laser oscillation. The stable loss N_{t2} is low because the Cr^{4+} ion is acceleratively bleached by the fast enhancement of the oscillating laser. The high N_{t1}, small N_{t2} and fast progresses permit the oscillating laser of the Cr^{4+}Nd^{3+}:YAG to have a good self-Q-switched property whose full width at half maximum is about 4.2ns. Its highest laser power is about 5.7mW. Its peak power is about 150W. Its good fundamental transverse TEM_{00} mode results from the absorption bleaching established by both the pump and oscillating lasers, which suppress other transverse mode and allow the oscillation only in the fundamental transverse TEM_{00} mode.