提取诱发遗忘的执行控制机制

提取诱发遗忘是指对于部分记忆材料的回忆往往会导致对于其他相关记忆材料的回忆量降低的现象.本研究采用中文材料再认测试的提取练习范式,探讨了不同控制能力的被试以及在提取-诱发遗忘(RIF)效应上的不同特点和机制.结果表明:(1)回忆正确率存在RIF效应,即Nrp的回忆正确率显著高于Rp-.(2)用Stroop效应的强弱作为执行控制能力的指标,高执行控制能力者比低控者表现出更强的提取诱发遗忘效应,证明了提取诱发遗忘的执行控制机制.     

忆阻器及其阻变机理研究进展

忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景.本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了展望.     

SPICE modeling of flux-controlled unipolar memristive devices

Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.     

Impact of multiplexed reading scheme on nanocrossbar memristor memory’s scalability

Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density memory.However,based on the currently widely-adopted parallel reading scheme,scalability of the nanocrossbar memory is limited,since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component.In this paper,a multiplexed reading scheme is adopted as the foundation of the discussion.Through HSPICE simulation,we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size.We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory.In order to improve the scalability of the memory,memristors with nonlinear I–V characteristics and high LRS(low resistive state)resistance should be adopted.