Photodegradation mechanisms of acyclovir in water and the toxicity of photoproducts

Journal of Radioanalytical and Nuclear Chemistry - In the present work the final products of coumarin radiation chemical transformation are investigated by chromatography. During radiolysis of...     

New Dimeric Selenidoarsenate(Ⅲ): Solvothermal Synthesis and Crystal Structure of [Co(en)3]2As2Se5

A new selenidoarsenate [Co(en)3]2As2Se5 1 (en = ethylenediamine) was synthesized by a reaction of AsCl3, COCl2·6H2O and Se in en under mild solvothermal conditions, and the structure was determined by single-crystal X-ray diffraction. 1 crystallizes in the orthorhombic system, space group Pbca with a = 15.5092(12), b = 11.5756(9), c = 17.8138(14) (A), V= 3198.1(4)(A)3, Mr = 1023.12, Z = 4, Dc = 2.125 g/cm3,μ = 8.807 mm-1, F(000) = 1976, S = 1.171, the final R =0.0591 and wR = 0.1067 for 3170 observed reflections with I ＞ 2σ(Ⅰ). 1 consists of isolated dimeric[As2Se5]4- anion constructed by two comer-sharing AsSe3 trigonal pyramids and transition metal [Co(en)3]2+ cations. The optical absorption property and thermal stability of 1 are reported.     

The morphology modulation of graphene to produce wrinkles and folds for effective electrochemical determination of Hg(II)

A highly efficient electrode material, three-dimensional reduced graphene oxide with varying wrinkles and folds (WRGO), applicable for electrochemical determination of Hg(II) was obtained by treating graphene oxide (GO) with KOH aqueous solution. After alkaline etching, the relatively flat graphene was altered and its self-aggregation was significantly alleviated, producing more wrinkles and folds, which provided more active adsorption sites for heavy metal ions. WRGO-5 modified electrode system herein offers a highest sensitivity of (31.83 μAμM⁻¹) and a lowest LOD of (16.28 nM). Moreover, the electrode sensor possesses good stability and reproducibility.     

软化学法合成有机杂化锗、锡硫属化物的研究进展

本文总结了软化学方法合成有机杂化的锗、锡硫属化合物的研究进展，介绍了代表性物质的结构以及[M₂Q₆]^4-、[M₃Q₇]2-、[M₄Q₉]^2-、[M₄Q₁₀]^4-(M=Ge，Sn；Q=S，Se，Te)等构筑单元的超分子组装、聚合过程中的主要影响因素。