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针对多种类不锈钢多元素成分解析问题,应用X射线荧光光谱分析软件UniQuant,采用扩展基本参数法对多元不锈钢、双相不锈钢进行光谱干扰校正和基体校正,重新设定和优化多元不锈钢基体元素的测试条件,计算背景因子、杂质因子、谱线灵敏度系数和光谱重叠系数,测定Si、Mn、S、P、Ni、Cr、Cu、Mo、V、Al、Ti、Nb、Co、Ta、Fe的相对标准偏差在0.04%~3.8%,Ca、Zr、W、As、Sb、Sn的相对标准偏差在5.4%~20.3%,未知样品检测值与认定值比对结果相当理想,Ni、Cr的平均偏差小于0.05%,可以用很少标准样品实现各类型不锈钢多元素成分准确检测,检测范围宽,适用性好。 相似文献
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采用提拉法生长出尺寸为φ25mm×40mm的透明Er^3+:KLa(WO4)2(简称Er:KLW)晶体,并确定了较佳的生长工艺。X射线粉末衍射分析结果表明该晶体为四方晶系白钨矿结构(I41/a空间群),晶格常数为a=b=0.5444(3)nm,c=1.2120(6)nm。测量了Er:KLW晶体的拉曼谱,发现了380,450和808cm^-1等钨酸根的特征振动峰。测量了晶体的吸收光谱,应用J-O理论计算了晶体中Er^3+离子的强度参量(Ω2,Ω4,Ω6);荧光光谱测量结果表明该晶体在1529nm附近有很强的荧光发射峰,利于产生受激辐射。 相似文献
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通过拉曼散射光谱,吸收光谱,荧光发射寿命和808 nm LD激发下的红外荧光光谱的实验测量,系统研究了Nd3+:SrMoO4晶体的自受激拉曼光谱性质.分析指认了拉曼散射光谱中各拉曼峰所对应的晶格振动模式,得出了其SRS活性最强的声子频率约为898 cm-1,对应于(MoO24-)离子团的完全对称光学伸缩振动Ag模;通过J-O理论对晶体的吸收谱进行了全面的光谱参数计算,得出4F3/2→I11/2跃迁的积分发射截面达O.57×10-18cm2,自发辐射概率为141.06s-1;同时,实验测得该跃迁的荧光发射寿命约为O.2 ms.最后,结合808 nm LD激发下的红外波段荧光光谱,论证了SrMoO4晶体中Nd3+离子1068 nm发射通过拉曼频移获得1180 nm一级斯托克斯激光发射的可能性,为Nd3+:SrMoO4晶体的自受激拉曼激光器研究提供了理论依据. 相似文献
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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer 下载免费PDF全文
InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs). 相似文献
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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers 下载免费PDF全文
InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software.The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance,such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-AlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency. 相似文献