Tests of a Two-Stage Core at the KV-1 Test Facility: Physical Aspects and Results

Atomic Energy - The physical aspects and main results of reactor tests of a two-stage core consisting of fresh fuel assemblies and a significant number of fuel assemblies from the previous core,...     

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers

Technical Physics Letters - Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier...     

Demercaptanization of Light Hydrocarbon Fractions with Strong Aqueous Ammonia without Producing Sulfur Caustic Wastewater

Theoretical Foundations of Chemical Engineering - A technology for the demercaptanization of light hydrocarbon fractions and liquefied petroleum gas with 25% aqueous ammonia is proposed. One...     

Spin-flop states in a synthetic antiferromagnet and variations of unidirectional anisotropy in FeMn-based spin valves

Spin valves with a synthetic antiferromagnet have been prepared by magnetron sputtering. Regularities of the formation of single- and two-phase spin-flop states in the synthetic antiferromagnet have been studied using magnetoresistance measurements and imaging the magnetic structure. A thermomagnetic treatment of spin valve in a field that corresponds to the single-phase spin-flop state of synthetic antiferromagnet was shown to allow us to obtain a magnetically sensitive material characterized by hysteresis-free field dependence of the magnetoresistance.     

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.     

An Illustration of the Possibility of Using GNSS Observations to Measure Evaporation Over a Reservoir Using the Example of Nizhnekamsk HPP

Power Technology and Engineering - Daily variations of integrated water vapor content in the atmosphere in the region of the Nizhnekamsk HPP were examined, from measurement data of GNSS radio...     

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.