PbTiO3铁电薄膜晶化工艺研究

对sol-gel法制备的PbTiO3薄膜采用不同晶化工艺进行晶化,研究了晶化温度和基片对薄膜晶化的影响.研究表明,采用快速晶化工艺时,在550～750℃的较宽温度范围内,薄膜能够结晶形成稳定钙铁矿相结构,在LaAlO3基片上能获得结晶良好、具有(001)择优取向的PbTiO3薄膜.与常规晶化相比,快速晶化处理的薄膜结晶质量好,晶粒较小、分布均匀致密.     

A comparison study of on-chip short pulse generation circuits based on a coplanar waveguide

A few traditional pulse-forming circuits are implemented in a commercial 0.13 μm digital complementary-metal-oxide-semiconductor （CMOS） technology. These circuits, based on a coplanar waveguide, are analyzed and compared through CadenceTM Spectre simulati