Response to simulated typical daily outdoor irradiation conditions of thin-film silicon-based triple-band-gap,triple-junction solar cells

We studied the response to various realistic outdoor conditions of thin-film silicon-based triple-band-gap, triple-junction cells that were made in house. The triple-junction cells consist of a stack of proto-Si:H/proto-SiGe:H/nanocrystalline (nc)-Si:H cells in an n–i–p configuration, fabricated using hot-wire chemical vapour deposition (CVD). Current matching was determined for modeled spectra of four different days of the year that are typical for the northwestern European climate. Spectral modeling was based on measured irradiation data. The results showed that on a clear day in June, when the actual spectrum was closest to the reference AM1.5 spectrum, the matching was ideal. As the spectral shape varied during the course of the day with respect to the AM1.5 reference the matching became progressively worse. We found that the top cell (1.8 eV) and bottom cell (1.1 eV) are most sensitive to spectral changes, whereas the middle cell (1.5 eV) is less sensitive. Overall, it was evident that either cloudiness or seasonal variations led to an increase in current mismatch between the cells. If the sub-cells are closely matched, it may even occur that a cell designed to be current limiting no longer fulfills that role.     

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.     

Myelination of the brain in MRI: a staging system

CORT has been developed to treat recurrent gynaecological malignancies infiltrating the pelvic wall unilaterally. The surgical part consists of: (i) staging laparotomy/lymphadenectomy, (ii) maximum tumour resection at the pelvic wall and exenteration of infiltrated central pelvic organs, (iii) implantation of guiding tubes on the residual tumour/tumour bed on the pelvic wall, (iv) pelvic wall plasty with muscle, musculocutaneous and omentum flaps, (v) operative reconstruction of bowel, bladder and perineo-vulvo-vaginal functions. Radiation is performed as interstitial high dose rate brachytherapy through the implanted tubes. Patients without prior pelvic irradiation receive in addition, whole pelvis teletherapy. CORT has been evaluated in a prospective phase I and II trial at the University of Mainz. Within a 3-year period, 21 patients with pelvic wall recurrences from various gynaecological primary tumours were treated. Seventeen patients had been irradiated as (part of) the previous therapy with a median total mid-pelvic dose of 65 Gy (range 40-100 Gy). There was no operative mortality. Five patients developed complications necessitating surgical intervention. One patient died from fatal thromboembolism 6 months after CORT without evidence of tumour progression. In 14 patients, local tumour control has been achieved. After a median follow-up period of 27 months (range 6-38 months) Kaplan-Meier life table analysis revealed an actuarial survival probability of 55% (recurrence-free 49%). We conclude from these preliminary results, that the CORT procedure for the treatment of pelvic wall recurrences is feasible and may lead to encouraging therapeutic success in selected patients, whose situation had been hopeless so far.     

Grenzgebiete der lebensmittelwissenschaft

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Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition

We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior to a-Si:H deposition. The atomic hydrogen is produced by hot-wire chemical vapor deposition (HWCVD). For this purpose, we deposited a-Si:H layers onto both sides of n-type FZ c-Si wafers and measured the minority carrier effective lifetime and implied V_OC for different H treatment times ranging from 5 s to 30 s prior to a-Si:H deposition. We found that increasing hydrogen treatment times led to lower effective lifetimes and implied V_OC values for the used conditions. The treatments have been performed in a new virgin chamber to exclude Si deposition from the chamber walls. Our results show that a short atomic hydrogen pretreatment is already detrimental for the passivation quality which might be due to the creation of defects in the c-Si. AFM measurements do not show any change in the surface roughness of the different samples.     

Tailoring C60 for Efficient Inorganic CsPbI2Br Perovskite Solar Cells and Modules

Although inorganic perovskite solar cells (PSCs) are promising in thermal stability, their large open-circuit voltage (V_OC) deficit and difficulty in large-area preparation still limit their development toward commercialization. The present work tailors C₆₀ via a codoping strategy to construct an efficient electron-transporting layer (ETL), leading to a significant improvement in V_OC of the inverted inorganic CsPbI₂Br PSC. Specifically, tris(pentafluorophenyl)borane (TPFPB) is introduced as a dopant to lower the lowest unoccupied molecular orbital (LUMO) level of the C₆₀ layer by forming a Lewis acidic adduct. The enlarged free energy difference provides a favorable enhancement in electron injection and thereby reduces charge recombination. Subsequently, a nonhygroscopic lithium salt (LiClO₄) is added to increase electron mobility and conductivity of the film, leading to a reduction in the device hysteresis and facilitating the fabrication of a large-area device. Finally, the as-optimized inorganic CsPbI₂Br PSCs gain a champion power conversion efficiency (PCE) of 15.19%, with a stabilized power output (SPO) of 14.21% (0.09 cm²). More importantly, this work also demonstrates a record PCE of 14.44% for large-area inorganic CsPbI₂Br PSCs (1.0 cm²) and reports the first inorganic perovskite solar module with the excellent efficiency exceeding 12% (10.92 cm²) by a self-developed quasi-curved heating method.     

Novel profiled thin-film polycrystalline silicon solar cells onstainless steel substrates

In order to obtain higher conversion efficiencies while keeping the manufacturing cost low in thin-film PV technologies, a possible low bandgap material is amorphous silicon germanium. Although record efficiencies in excess of 15% have been reported for triple-junction solar cells comprising these alloys, concerns regarding the stability and quality of this material still need to be overcome. Another approach is the introduction of thin-film micro- or polycrystalline silicon with a band gap of 1.1 eV, deposited at a temperature that is low enough to allow cheap, “foreign” carrier materials. Apart from the application of a modified PECVD method utilizing frequencies in the VHP domain, the hot wire CVD (HWCVD) method appears a particularly promising technique for the deposition of high-quality thin-film intrinsic or doped poly-Si. In this contribution, special attention will be paid to the latest developments in the application of hot-wire deposited silicon thin films in solar cells. By implementing a profiled hydrogen-diluted HWCVD growth scheme that produces a thin small-grained seed layer on top of a thin n-layer, we have been able to obtain fast polycrystalline growth of the intrinsic layer of an n-i-p solar cell. An efficiency of 4.41% is obtained and the fill factor is 0.607. The current density is close to 20 mA/cm² for an i-layer that is only 1.22 μm thick. The cell is deposited on plain stainless steel and thus does not comprise a back reflector     

Upconversion in solar cells

The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells.