轴流风机叶尖泄漏流动的大涡模拟（英文）

本文采用大涡模拟(LES)的方法研究了在基于外壳直径的雷诺数为9.36×105条件下5叶片的轴流式风扇的流动特性,并且着重分析了叶尖泄漏的流动现象。本文使用了基于有限体积法和分层笛卡尔网格的可压流求解器进行数值计算,并应用了体积守恒的切割网格方法处理风扇几何结构的浸入式边界。同时开发了用于笛卡尔网格的旋转周期性边界条件,这样只需分析由2.5亿网格构造的包含一片叶片的72°区域。该研究首先对网格质量进行了分析,之后讨论了瞬态和时均流场的特性,并与使用RANS的5叶片模拟结果进行了对比。RANS和LES模拟结果的主要不同之处体现在叶尖泄漏涡尾流中的湍流动能。本文进而研究了叶尖间隙对叶尖泄漏涡的影响。研究表明,间隙的大小会影响叶尖泄漏涡的大小形状。此外,间隙中更多的分离现象和反向旋转涡会导致较低的湍流动能。     

Multigrid methods with space–time concurrency

Computing and Visualization in Science - We consider the comparison of multigrid methods for parabolic partial differential equations that allow space–time concurrency. With current trends in...     

Four-point probe characterization of 4H silicon carbide

We report on four-point probe measurements on SiC wafers as such measurements give erratic data. Current-voltage measurements on n-type SiC wafers doped to 3 × 10¹⁸ cm⁻³ are non-linear and single probe I-V measurements are symmetrical for positive and negative voltages. For comparison, similar measurements of p-type Si doped to 5 × 10¹⁴ cm⁻³ gave linear I-V, well-defined sheet resistance and the single probe I-V curves were asymmetrical indicating typical Schottky diode behavior. We believe that the reason for the non-linearity in four-point probe measurements on SiC is the high contact resistance. Calculations predict the contact resistance of SiC to be approximately 10¹² Ω which is of the order of the input resistance of the voltmeter in our four-point probe measurements. There was almost no change in two-probe I-V curves when the spacing between the probes was changed from 1 mm to 2 cm, further supporting the idea that the I-V characteristics are dominated by the contact resistance.     

Composite gel-filled giant vesicles: Membrane homogeneity and mechanical properties

We further investigate the properties of composite Poly(NIPAM) (poly(N-isopropylacrylamide)) gel-filled giant vesicles, focusing here on i) the homogeneity of the membrane, ii) its coupling to the inner gel under strong suction pressures, and iii) the relation between the final elastic modulus of the vesicles and the amount of crosslinker in the pre-gel medium. We show that whereas the photo-polymerization process induces a decrease of the membrane homogeneity at the micrometer size range, the membrane still remains strongly coupled to the internal gel network. The vesicles studied here display average moduli in the range [0.5–25] kPa, confirming their potential as biomimetic mechanical systems.     

Frequency domain lifetime characterization

Time-based measurements are commonly used for lifetime characterization of semiconductors. We have developed the theory, verified by experiment, of frequency-based lifetime characterization as an alternative to time-based measurements for MOS devices biased in inversion. One consideration during lifetime/diffusion length measurements, is whether the near-surface space-charge region or the bulk or quasineutral region is characterized. To characterize the near-surface space-charge region of the device, one usually makes room temperature pulsed MOS capacitor or diode leakage current measurements. We show that room-temperature, frequency-domain capacitance, conductance, or resistance measurements characterize the quasineutral bulk, not the space charge region, in contrast to room-temperature pulsed MOS-C or diode leakage current measurements which characterize the space-charge region     

Interpretation of surface and bulk effects using the pulsed MIS capacitor

The interpretation of lifetimes and surface generation velocities determined from pulsed MIS-C measurements is examined. The effect of surface generation on the C-t response and ‘Zerbst’ plot is demonstrated and values for s₀ are correlated with the density of fast surface states. Different kinds of surface dominated responses are analyzed and we discuss how the bulk characteristics can be retrieved. It is also shown that pulsing from inversion significantly lowers s₀, but for high densities of surface states this technique does not suffice to eliminate surface effects. Finally, an approximate analysis of the C-t data is shown to agree quite well with the more exact analysis and it is then applied to lifetime maps of Si wafers.     

Analytical modeling of the partially-depleted SOI MOSFET

An analytical model for the partially-depleted (PD) silicon-on-insulator (SOI) MOSFET above threshold was developed. In contrast to previous models, this model includes front-back interface coupling with all the possibilities associated with it (accumulated, neutral, and depleted back interface). The model applies to tied-body as well as floating-body devices; however, thermal and edge effects are neglected. Interface coupling and floating-body effects are integrated together in a new “unified” algorithm. The “pseudo-two-dimensional” approach (which was used successfully to model lateral fields in bulk-Si devices) is extended to SOI devices. The model is extremely physical and thus highly predictive. Good agreement with experiment was obtained over a wide range of channel lengths and back gate voltages. Because of the model's neglect of thermal effects, however, disagreement was observed at high current levels. A brief physical interpretation of the results is also presented     

Hole and electron current transport inmetal-oxide-nitride-oxide-silicon memory structures

The carrier transport properties in metal-oxide (top oxide) nitride-oxide (tunnel oxide) silicon (MONOS) memory structures have been investigated in steady-state conditions under negative gate bias voltage. Carriers were separated into holes and electrons utilizing an induced junction of the p-channel MONOS transistors. Two-carrier transport is confirmed in the structure at negative gate polarity. It is found that the relatively thick top oxide acts as a potential barrier to the holes injected from the Si into the thin nitride. It is also found that a portion of the electrons injected from the gate at negative gate polarity recombine with the holes injected from the Si even in such a thin nitride and/or at the top-oxide/nitride interface     

The role of the mercury-Si Schottky-barrier height in /spl Psi/-MOSFETs

Pseudo-MOSFETs (/spl Psi/-MOSFET) are routinely used for silicon-on-insulator (SOI) material characterization, allowing threshold voltage, electron and hole mobility, doping density, oxide charge, interface trap density, etc. to be determined. The HgFET, one version of the /spl Psi/-MOSFET, uses mercury source and drain contacts. It is a very effective SOI test structure, but its current-voltage behavior is critically dependent on the Hg-Si interface. We have investigated this interface through current-voltage measurements of HgFETs and Schottky diodes and through device modeling. We show that modest barrier height changes of 0.2 eV lead to current changes of up to three orders of magnitude. Etching the Si surface in a mild HF :H/sub 2/O solution can easily change barrier heights and we attribute this behavior to Si surface passivation of dangling bonds. As this surface passivation diminishes with time, the Si surface becomes a more active generation site and the barrier height of the Hg-Si interface changes, taking on the order of 50-100 h at room temperature in air.