Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG)

This paper presents physics based analytical model for center potential, electric field and subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG). The expressions are derived from Poisson's equation in cylindrical co‐ordinate system based on parabolic potential approximation (PPA). The influence of technology parameter variations such as gate length, silicon pillar diameter and oxide thickness on electrical characteristics is studied in detail. Developed analytical model results are validated through the good agreement with simulated data obtained from ATLAS 3D simulator. Copyright © 2016 John Wiley & Sons, Ltd.     

On the fundamental limit to the use of cognitive radio in underwater acoustic sensor networks

Telecommunication Systems - Cognitive communication is an effective solution to the spectrum scarcity issues in wireless networks. The underwater sensor networks are prone to large propagation...     

Dielectric relaxation studies on [PEO–SiO<Subscript>2</Subscript>]:NH<Subscript>4</Subscript>SCN nanocomposite polymer electrolyte films

Present work deals with findings on dielectric relaxation behaviour and a.c. conduction in a SiO₂-doped polymer nanocomposite electrolyte system, namely, [(100 − x)PEO + xSiO₂]:yNH₄SCN. The formation of nanocomposite has been ascertained by XRD measurements. The effect of salt and filler (SiO₂) on conductivity response of PEO-based nanocomposite polymer electrolyte has been investigated by impedance spectroscopy. The variation of dielectric permittivity, dielectric loss and modulus spectra with frequency and temperature was carried out from impedance spectroscopy data. The a.c. conductivity seems to follow the universal power law.     

Linear Combination of Atomic Orbitals Approximation in Nanocrystalline Yittria-Stabilized Zirconia Synthesized by Citrate–Nitrate Gel Combustion Process

Nanocrystalline yittria-stabilized zirconia (YSZ) compounds with yittria concentration varying between 8 and 12 mol% have been synthesized by gel combustion method followed by heat treatment at 550°C. The YSZs are found to posses stable face centered cubic structure at room temperature by X-ray diffractometry. The lattice parameter ' a ' showed an increasing trend with increasing concentration of yittria. The crystallite size estimated by Scherrer method was in the range of 7–10 nm. Band gap studies showed an increasing trend with increasing yittria concentration and are found to be consistent with respective lattice parameters following the tight binding approximation or linear combination of atomic orbitals approximation.     

A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency

Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source and drain resistance, for very high frequency application is developed. The current voltage characteristics and the transconductance have been evaluated and the influence of carrier concentration dependent mobility on frequency has also been analyzed. A cut-off frequency of 135 GHz is obtained.     

Nanocomposite Hydrogel Materials for Defective Cartilage Repair and Its Mechanical Tribological Behavior—A Review

Osteoarthritis (OA) is a regressive ailment that affects a large population of patients. The most common symptoms of OA in humans are cartilage abnormalities. Hydrogels are excellent candidates for cartilage regeneration and are widely accepted as implants. In the past few decades, numerous types of hydrogels have been synthesized to repair cartilage defects. This study highlights recent advances in hydrogel development for the treatment of cartilage defects. In addition, the detailed progression of tailored nanocomposite hydrogels is summarized, and emphasis has been placed on the mechanical properties, especially the tribological behavior of the developed nanocomposite hydrogels.     

Environmental management of acid water problems in mining areas

Acid Mine Drainage (AMD) originates from the oxidation and leaching of sulphide minerals present in coal and metalliferrous ore bodies and gives rise to several environmental degradation problems. An investigation has been carried out to combat the acidic water problems. Results of this investigation indicate that application of anionic surfactant (sodium lauryl sulphate) and food preservatives (sodium benzoate and potassium sorbate) effectively abate the acid formation at low concentration levels (15–40 ppm) as tested in laboratory as well as at pilot-scale levels. Acidity, sulphate and iron concentrations are found to reduce by over 70 percent and remained low for more than three months after treatment. Thus this investigation demonstrates the management of these problems in an environmentally safe manner by controlling acid formation at its source.     

Surface modification of semiconductor photoelectrode for improved solar cell performance

The investigation is focused on the synthesis of nanostructured TiO₂–CuO admixed photoelectrode and its use as a photoelectrode of high-efficiency PEC solar cells for hydrogen production. TiO₂, in the nanostructured form, has been prepared by hydrolysis of titanium(IV) isopropoxide solution. An improvement in the nanostructured TiO₂ photoelectrode carried out in the present work corresponds to admixing CuO to improve the spectral response. In the present study, photo-electrochemical (PEC) and hydrogen evolution characteristics of new types of ns-TiO₂–CuO admixed/Ti septum-based semiconductor septum photo-electrochemical (SC-SEP PEC) solar cell has been studied. The CuO admixed ns-TiO₂ exhibited a high photocurrent and photovoltage of 18.6 mA/cm² and 680 mV, respectively. The ns-TiO₂–CuO electrode exhibited a higher hydrogen gas evolution rate of 14.00 l/h m².     

Localization under anchor node uncertainty for underwater acoustic sensor networks

This paper deals with the problem of sensor node localization in the presence of uncertainty in anchor node location. Aqueous environments are prone to adverse effects of underwater currents. This adversity causes non‐negligible mobility to the anchor nodes deployed under water. Localization in the presence of uncertainty in the anchor node location is quite challenging. Also, the authors consider the ray‐bending property of underwater medium due to depth dependent sound speed, to furnish the accurate position estimate of the target node. Standard ray equations are used to model the path followed by acoustic rays in water. Maximum likelihood estimation is proposed to estimate the location of target node with uncertainty in anchor node positions and is compared with the scheme with exact knowledge of anchor node positions, and the results are reported. Monte Carlo simulation is used to assess the performance of the proposed method. Also, the Cramer‐Rao lower bound with uncertainty in anchor nodes is derived and described. Simulation results of the proposed algorithm outperform the existing algorithm with known anchor location by up to 49.4%, and hence, accuracy is improved in the proposed method.     

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported,to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions.This novel structure offers low barrier height at the source and offers high ON-state current.The ION/IoFF of ISE-CGAA-SB-MOS-FET increases by 1177 times and offers steeper subthreshold slope (～60 mV/decade).However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate,dual metal gate,single metal gate with ISE,and dual metal gate with ISE has been presented.The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design.The numerical simulation is performed using the ATLAS-3D device simulator.