Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Measurement of the interface trap and dielectric charge density in high-/spl kappa/ gate stacks

We demonstrate an accurate measurement of the interface trap density and the stress-induced dielectric charge density in Si/high-/spl kappa/ gate dielectric stacks of metal-oxide-semiconductor field-effect transistors (MOSFETs) using the direct-current current-voltage (DCIV) technique. The capture cross section and density of the interface traps in the high-/spl kappa/ gate stack were found to be similar to those of the Si/SiO/sub 2/ interface. A constant-voltage stress of the p-channel MOSFET in inversion is shown to result in a negative dielectric charging and an increase in the interface trap density.     

Influence of turbulent mixing on fast polymerization reactions

Investigations on development of a macrokinetics approach were generalized to the analysis of fast chemical reactions, mainly using cationic polymerization of isobutylene as an example, which is a new class of liquid‐phase processes. The removal of diffusional constraints on polymer synthesis, by intensification of turbulent mixing in the reaction zone, makes it possible to calculate the kinetic parameters of polymerization and polymer‐analogous reactions, to optimize the molecular characteristics of polymeric products obtained, and to control the character of the process as a whole. The laws pertaining to the progression of fast processes are considered for the synthesis of separate polymers, in particular stereoregular polydienes, ethylene–propylene copolymers, and chlorobutyl rubber. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 94: 613–624, 2004     

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO₂ thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0 < z < T_IL and the traps of HfO₂ in T_IL < z < T_HK. The traps near the Si/SiO₂ interface dominated the 1/f noise at higher frequencies, which is common in SiO₂ dielectrics. For the HfO₂/SiO₂ gate stack, however, the magnitude of the 1/f noise did not significantly change after HCI and PBTI because of more traps in the bulk HfO₂ film than at the bottom of the interface.     

Intrinsic bonding defects in transition metal elemental oxides

Gate dielectrics comprised of nanocrystalline HfO₂ in gate stacks with thin SiO₂/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO₂ and other transition metal elemental oxides are assigned to O-atom divacancies, clustered at internal grain boundaries. Three engineering solutions for defect reduction are identified: i) deposition of ultra-thin, <2 nm, HfO₂ dielectric layers, in which grain boundary formation is suppressed by effectively eliminating inter-primitive unit cell π-bonding interactions, ii) chemically phase separated high HfO₂ silicates in which inter-primitive unit cell p-bonding interactions are suppressed by the two nanocrystalline grain size limitations resulting from SiO₂ inclusions, and iii) non-crystalline Zr/Hf Si oxynitrides without grain boundary defects.     

Genetic mapping of the α-galactosidase MEL gene family on right and left telomeres of Saccharomyces cerevisiae

The α-galactosidase MEL2–MEL10 genes have been genetically mapped to right and left telomere regions of the following chromosomes of Saccharomyces cerevisiae: MEL2 at VII L, MEL3 at XVI L, MEL4 at XI L, MEL5 at IV L, MEL6 at XIII R, MEL7 at VI R, MEL8 at XV R, MEL9 at X R and MEL10 at XII R. A set of tester strains with URA3 inserted into individual telomeres and no MEL genes was used for mapping.     

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO₂/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.     

Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress

A single-pulse technique, with a wide range of pulse times, has been applied to study positive bias temperature instability in high-k nMOSFETs. It is shown that the charging phenomenon includes both fast and slow electron trapping processes with rather well-defined characteristic times, which differ by six orders of magnitude. On the other hand, the poststress charge relaxation cannot be described by a simple detrapping process, which makes identifying the dominant detrapping mechanism complicated.     

Exploiting heterozygosity in industrial yeasts to create new and improved baker's yeasts

The main aim of the work was to utilize heterozygosity of industrial yeast strains to construct new baker's yeast strains. Commercial baker's yeast strain ALKO 743, its more ethanol tolerant descendant ALKO 554 selected initially for growth over 300 generations in increasing ethanol concentrations in a glucose medium, and ALKO 3460 from an old domestic sour dough starter were used as starting strains. Isolated meiotic segregants of the strains were characterized genetically for sporulation ability and mating type, and the ploidy was determined physically. Heterozygosity of the segregant strains was estimated by a variety of molecular characterizations and fermentation and growth assays. The results showed wide heterozygosity and that the segregants were clustered into subgroups. This clustering was used for choosing distantly or closely related partners for strain construction crosses. Intrastrain hybrids made with segregants of ALKO 743 showed 16–24% hybrid vigour or heterosis. Interstrain hybrids with segregants of ALKO 743 and ALKO 3460 showed a wide variety of characteristics but also clear heterosis of 27–31% effects as assayed by lean and sugar dough raising. Distiller's yeast ALKO 554 turned out to be a diploid genetic segregant and not just a more ethanol tolerant mutant of the tetraploid parent strain ALKO 743.