Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Journal of Communications Technology and Electronics - The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by...     

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Journal of Communications Technology and Electronics - We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for...     

Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range

Journal of Communications Technology and Electronics - Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The...