The Standard Model of the Heterostructure for Microwave Devices

A methodology of the selection of the initial materials, architecture and synthesis of heterostructures based on domestic materials and technologies as applied to specific types of microwave components needs to be developed. As the nomenclature expands, the requirements on energy consumption, overall dimensions and weight, frequency range, noise, values of working temperatures, and other characteristics of microwave components have significantly increased. Specific examples of power amplifiers for various applications (wireless communication systems and location systems) are considered. It is shown that in order to implement such developments, it is necessary to apply modern methods of multilevel computer modeling using various methods of optimization and widely use the tested technical solutions. The final result of this development is the creation of a set of basic physical models of the heterostructures, including those based on the solution of optimized problems by choosing the initial material, substrate material, layer composition, their sequences, layer thicknesses, impurity contents, and their distribution by the layer thickness. All this makes it possible to form an acceptable level of mechanical stresses and high values of the electrophysical characteristics in the heterostructure. The initial data set in the form of a library of basic models of the heterostructures will make it possible to significantly accelerate the development of various microwave components and optoelectronic components in the system of instrument and technological design and improve the characteristics of the devices and economic rates.     

Mathematical Modeling of a Self-Learning Neuromorphic Network Based on Nanosized Memristive Elements with a 1T1R-Crossbar-Architecture

Russian Microelectronics - Artificial neural networks play an important role in the modern world. Their main field of application is the tasks of recognizing and processing images, speech,...     

Simulation of Hall Field Elements Based on Nanosized Silicon-on-Insulator Heterostructures

Russian Microelectronics - This article is devoted to the issues of numerical simulation of field Hall sensors (FHSs) based on the silicon-on-insulator (SOI) structure with two control gates. To...     

Factors Determining the Relevance of Creating a Research Infrastructure for Synthesizing New Materials in Implementing the Priorities of Scientific and Technological Development of Russia

Russian Microelectronics - In the modern world, knowledge and advanced technologies determine the effectiveness of the economy, and they can radically improve the quality of life of people,...     

Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them

The results of a theoretical study based on ab initio calculations of the polarization properties of AlN, GaN, and AlGaN semiconductors with the wurtzite structure are presented. The values of the spontaneous and piezoelectric polarizations, as well as the piezoelectric constants, are calculated for these nitride compounds. With the aim of further considering prospective heterostructures based on (Al,Ga,AlGa)N compounds, the charge densities at the AlN/GaN, AlGaN/AlN, and AlGaN/GaN interfaces and carrier concentration at the AlGaN/GaN heterointerface is estimated and compared with the experimental data.     

Inverse-Coefficient Problem of Heat Transfer in Layered Nanostructures

Russian Microelectronics - The rapid development of electronics is leading to the creation and use of small electronic components, including nanoelements of a complex layered structure. The search...     

Issues of Implementing Neural Network Algorithms on Memristor Crossbars

Russian Microelectronics - The property of the natural parallelization of matrix-vector operations inherent in memristor crossbars creates opportunities for their effective use in neural network...     

Calculation of Heat Transfer in Nanosized Heterostructures

Russian Microelectronics - We calculate the temperature regime in nanosized AlAs/GaAs binary heterostructures. When modeling the heat transfer in nanocomposites, it is important to take into...