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Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier- injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area. 相似文献
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研究了一种基于纳米沸石分子筛Ag+ZSM 5的新型气体传感器。该传感器利用纳米沸石分子筛Ag+ZSM 5对丙酮分子有较好的选择性和石英晶体振荡器对微小质量改变的高度灵敏性的特性设计并制作了对丙酮敏感的气体传感器。研究结果发现,采用ZSM 5型分子筛并用Ag+对该分子筛进行修饰可以提高对丙酮气体的响应,而对乙醇的响应较小。对不同浓度的丙酮气体的测试表明:在较低的丙酮气体浓度(0.67μmol/L)下,传感器表现出良好的响应,检测灵敏度较高,可达到44.8Hz/(μmol·L-1)。同时,该传感器具有良好的可逆性、重复性。 相似文献
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