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本文给出了一种提高Doherty功率放大器（DPA）效率的方法．为减轻非理想负载调制和膝点电压效应引起的DPA效率下降,首先分析得出了载波和峰值功放管负载阻抗应满足的要求,推导出了与载波放大器负载阻抗相关的等驻波比圆,并使用该圆得到了载波功放管的最优负载阻抗,以提高DPA的效率．根据所提方法设计并实现了一个工作在2．35GHz的非对称DPA．单音信号测试时,该放大器的饱和功率为49．3dBm,在峰值和8dB回退功率下其漏极效率分别高于68％和55％．五载波100MHz LTE-advanced信号激励下,输出功率40．5dBm时该放大器的平均效率为50．5％,其校正后的邻道泄露比（ACLR）低于－47．5dBc．实验结果表明,本文设计的非对称Doherty放大器具有较高的平均效率和良好的线性度性能,验证了所提方法的有效性． 相似文献
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A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and +80℃. 相似文献
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本文针对无线通信应用的InGaP/GaAs HBT射频功率放大器,提出一种新型的在片温度补偿电路。该温度补偿电路由一个GaAs HBT和五个阻值大小不同的电阻组成,结构简单,可实现性强。通过调整偏置电路中参考电压的方法调节功率放大器静态偏置电流,有效地实现补偿功率放大器功率增益和输出功率随温度变化的特性,优化了射频功率放大器的热特性,性能随温度只有略微的退化。将该温度补偿电路置入一个无线通信应用的三级单片集成功率放大器,温度在-20℃到＋80℃范围内变化时,增益随温度变化的变化量从4.3dB提高到只有1.1dB。 相似文献
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A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temp... 相似文献
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