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VHF-PECVD法制备微晶SiGe薄膜及太阳电池 总被引:1,自引:3,他引:1
以Si2H6和GeF4为源气体,用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在不同衬底温度和功率条件下制备了SiGe薄膜材料.用喇曼光谱和扫描电子显微镜(SEM)对材料的结构进行了研究.结果表明:薄膜结构随温度的升高、功率的增大逐渐由非晶SiGe(a-SiGe)转变为微晶SiGe(μc-SiGe)材料.将这种材料应用于μc-SiGe薄膜太阳能电池中,电池结构为玻璃/SnO2/p-μc-Si/i-μc-SiGe/n-μc-Si/Al,首次获得效率η=4.2%的μc-SiGe薄膜太阳能电池,开路电压Voc=0.335 V,短路电流密度Jsc=20.16 mA/cm2,填充因子FF=41.938%. 相似文献
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本文利用直流磁控溅射法在玻璃衬底上制备了低电阻率、高透光率的掺铝氧化锌(ZnO:Al)透明导电薄膜,经过稀盐酸腐蚀制绒后,作为前电极应用于叠层硅薄膜太阳能电池。详细讨论了溅射和腐蚀工艺参数对薄膜光电性能的影响。优化工艺制备出的AZO薄膜具有高散射能力的表面形貌,其透光率在81%以上(380~1100nm范围),方块电阻和雾度分别为11Ω/□和41.3%。AZO薄膜作为前电极应用于a-Si:H/μc-Si:H双结薄膜太阳能电池,小面积电池的初始转换效率达到了12.5%。 相似文献
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This study deals with the optimization of direct current(DC) sputtered aluminum-doped zinc oxide (AZO) thin films and their incorporation into a-Si:H/μc-Si:H tandem junction thin film solar cells aiming for high conversion efficiency.Electrical and optical properties of AZO films,i.e.mobility,carrier density,resistivity, and transmittance,were comprehensively characterized and analyzed by varying sputtering deposition conditions, including chamber pressure,substrate temperature,and sputtering power.The correlations between sputtering processes and AZO thin film properties were first investigated.Then,the AZO films were textured by diluted hydrochloric acid wet etching.Through optimization of deposition and texturing processes,AZO films yield excellent electrical and optical properties with a high transmittance above 81%over the 380-1100 nm wavelength range,lowsheet resistance of 11Ω/□and high haze ratio of 41.3%.In preliminary experiments,the AZO films were applied to a-Si:H/μc-Si:H tandem thin film solar cells as front contact electrodes,resulting in an initial conversion efficiency of 12.5%with good current matching between subcells. 相似文献
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