一种新型压阻值理论计算方法

A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.     

A readout system for passive pressure sensors

This paper presents a readout system for the passive pressure sensors which consist of a pressure- sensitive capacitor and an inductance coil to form an LC circuit. The LC circuit transforms the pressure variation into the LC resonant frequency shift. The proposed system is composed of a reader antenna inductively coupled to the sensor inductor, a measurement circuit, and a PC post-processing unit. The measurement circuit generates a DC output voltage related to the sensor＇s resonant frequency and converts the output voltage into digital form. The PC post-processing unit processes the digital data and calculates the sensor＇s resonant frequency. To test the performance of the readout system, a sensor is designed and fabricated based on low temperature co-fired ceramic （LTCC）, and a series of testing experiments is carried out. The experimental results show good agreement with the impedance analyzer＇s results, their error is less than 2.5%, and the measured values are almost insensitive to the variation of readout distance. It proves that the proposed system is effective practically.     

一种SOI高温压力传感器敏感芯片

从传感器的受力结构、能量转化结构和金属引线三个方面对SOI压阻式压力传感器芯片进行高温设计,计算出每个因素所造成的影响并与外部气压对传感器造成的影响进行对比,并给出了压阻的工艺尺寸和掺杂浓度。通过工艺制备和封装,研制出耐高温压力传感器芯片,常温压力测试结果表明传感器敏感芯片在常温下灵敏度较高,非线性误差在0.1%以下,迟滞性小于0.5%。高温下的性能测试结果表明,传感器可以用于350℃恶劣环境条件下的压力测量,为压阻式高温压力芯片的研制提供了参考。