1.31μm InGaAsP/InGaAlAs TM偏振高速激光器的优化设计

报道了一种以InGaAsP(阱)/InGaAlAs(垒)量子阱为有源区的1.31μmTM偏振高速激光器。以1%张应变的In_(0.49)Ga_(0.51)As_(0.79)P_(0.21)作为阱层,0.5%压应变的InGaAlAs作为垒层,计算了由不同势垒带隙(1.309、1.232、1.177、1.136、1.040 eV)构成的五种多量子阱的发光特性,和由其构成的激光器的器件特性。数值模拟分析表明,采用适度小的势垒带隙,既能将载流子有效限制在有源区,又可以得到载流子在量子阱间的均匀分布,从而改善量子阱的发光特性和激光器的性能参数。该仿真对研制低阈值电流、高特征温度和大调制带宽的InGaAsP/InGaAlAs应变补偿量子阱激光器具有指导意义。     

InGaAsP/InGaAs双结太阳电池研究

本文采用MOCVD设备生长了与InP晶格匹配的InGaAs(P)光伏器件。分析了InGaAsP/InGaAs (1.07/0.74 eV)双结太阳电池的QE与I-V特性。在AM1.5D光谱下,InGaAsP/InGaAs双结太阳电池的开路电压,短路电流,填充因子及转换效率分别为0.977 V, 10.2 mA/cm,80.8%,8.94%。对于InGaAsP/InGaAs双结太阳电池,在聚光条件下,其最大转换效率在280个聚光倍数下达到了13%。这一结果预示了GaInP/GaAs/InGaAsP/InGaAs四结太阳电池的潜在应用前景。     

Influence of GaInP ordering on the performance of GaInP solar cells

CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room-temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.